Semiconductor-on-insulator integrated circuit with interconnect below the insulator
View Patent ↗An integrated circuit assembly comprises an insulating layer, a semiconductor layer, a handle layer, a metal interconnect layer, and transistors. The insulating layer has a first surface, a second surface, and a hole extending from the first surface to the second surface. The semiconductor layer has a first surface and a second surface, the first surface of the semiconductor layer contacting the first surface of the insulating layer. The handle layer is coupled to the second surface of the semiconductor layer. The metal interconnect layer is coupled to the second surface of the insulating layer, the metal interconnect layer being disposed within the hole in the insulating layer. The transistors are located in the semiconductor layer. The hole in the insulating layer extends to at least the first surface of the semiconductor layer. The metal interconnect layer electrically couples a plurality of the transistors to each other.
1. An integrated circuit assembly comprising:
an insulating layer having a first surface, a second surface, and a hole extending from the first surface to the second surface, and the first surface and second surface being on opposite sides of the insulating layer;
a semiconductor layer having a first surface and a second surface, the first surface of the semiconductor layer physically contacting the first surface of the insulating layer a region of the semiconductor layer into which dopant ions have been implanted through the hole;
a handle layer coupled to the second surface of the semiconductor layer;
a metal interconnect layer physically contacting the second surface of the insulating layer, the metal interconnect layer being disposed within the hole in the insulating layer; and
transistors located in the semiconductor layer;
wherein the hole in the insulating layer extends to at least the first surface of the semiconductor layer wherein the region of the semiconductor layer into which dopant ions have been implanted has been annealed; and
wherein the metal interconnect layer electrically couples a plurality of the transistors to each other.
2. The integrated circuit assembly of claim 1 ,
wherein the transistors comprise a field-effect transistor; and
wherein the hole in the insulating layer exposes a source region or a drain region of the field-effect transistor.
3. The integrated circuit assembly of claim 1 , further comprising a second metal interconnect layer formed on the second surface of the semiconductor layer.
4. The integrated circuit assembly of claim 3 , wherein the second metal interconnect layer comprises a refractory metal.
5. The integrated circuit assembly of claim 1 ,
wherein the second surface of the semiconductor layer comprises a region of a metal-semiconductor compound; and
wherein the hole in the insulating layer extends through the semiconductor layer to expose the region of the metal-semiconductor compound.
6. The integrated circuit assembly of claim 5 , wherein the metal-semiconductor compound comprises a metal silicide.
7. The integrated circuit assembly of claim 1 , wherein the semiconductor layer comprises silicon.
8. The integrated circuit assembly of claim 1 ,
wherein the transistors comprise field-effect transistors; and
wherein the metal interconnect layer electrically couples only to drain regions of the field-effect transistors.
9. The integrated circuit assembly of claim 1 , wherein:
a substrate layer has been removed from the second surface of the insulating layer before the metal interconnect layer has been contacted thereto.
10. The integrated circuit assembly of claim 1 , wherein:
the hole in the insulating layer exposes the first surface of the semiconductor layer.
11. The integrated circuit assembly of claim 1 , wherein:
the transistors comprise a plurality of heavily doped regions extending from the second surface to the first surface of the semiconductor layer.
12. The integrated circuit assembly of claim 11 , wherein:
the hole in the insulator layer exposes at least one of the heavily doped regions.
13. The integrated circuit assembly of claim 1 , further comprising:
a region of the semiconductor layer into which dopant ions have been implanted through the hole.
14. The integrated circuit assembly of claim 13 , wherein:
the region of the semiconductor layer into which dopant ions have been implanted has been annealed.
15. The integrated circuit assembly of claim 1 , wherein:
the transistors are electrically coupled to each other via the metal interconnect and an additional circuit element.
16. The integrated circuit assembly of claim 1 ,
wherein the transistors have a gate layer; and
further comprising a second hole extending from the first surface of the insulating layer to the gate layer.
17. An integrated circuit assembly comprising:
an insulating layer having a first surface, a second surface, and a hole extending from the first surface to the second surface, and the first surface and second surface being on opposite sides of the insulating layer;
a semiconductor layer having a first surface and a second surface, the first surface of the semiconductor layer physically contacting the first surface of the insulating layer a region of the semiconductor layer into which dopant ions have been implanted through the hole;
a first metal interconnect layer physically contacting the second surface of the insulating layer, the metal interconnect layer being disposed within the hole in the insulating layer;
a second metal interconnect layer physically contacting the second surface of the semiconductor layer; and
transistors located in the semiconductor layer;
wherein the hole in the insulating layer extends to at least the first surface of the semiconductor layer wherein the region of the semiconductor layer into which dopant ions have been implanted has been annealed; and
wherein the first metal interconnect layer electrically couples a plurality of the transistors to each other.
18. An SOI integrated circuit assembly comprising:
a buried oxide layer having a first surface, a second surface, and a hole extending from the first surface to the second surface, and the first surface and second surface being on opposite sides of the buried oxide layer;
an active layer having a first surface and a second surface, the first surface of the active layer physically contacting the first surface of the buried oxide layer a region of the semiconductor layer into which dopant ions have been implanted through the hole;
a handle layer coupled to the second surface of the active layer;
a metal interconnect layer physically contacting the second surface of the buried oxide layer, the metal interconnect layer being disposed within the hole in the buried oxide layer; and
transistors located in the active layer;
wherein the hole in the buried oxide layer extends to at least the first surface of the active layer wherein the region of the semiconductor layer into which dopant ions have been implanted has been annealed; and
wherein the metal interconnect layer electrically couples a plurality of the transistors to each other.