Light emitting diode structure
View Patent ↗A light emitting diode structure comprising a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a current resisting layer, a current spreading layer, a first electrode and a second electrode is provided. The first semiconductor layer is formed on the substrate. The active layer covers a portion of the first semiconductor layer, and exposes another portion of the first semiconductor layer. The second semiconductor layer is formed on the active layer. The current resisting layer covers a portion of the second semiconductor layer, and exposes another portion of the second semiconductor layer. The current spreading layer covers the second semiconductor layer and the current resisting layer. The current spreading layer is formed with a reverse trapezoidal concave over the current resisting layer. The first electrode is disposed on the first semiconductor layer. The second electrode is disposed within the reverse trapezoidal concave.
1. A light emitting diode structure, comprising:
a substrate;
a first semiconductor layer formed on the substrate;
an active layer covering a portion of the first semiconductor layer and exposing another portion of the first semiconductor layer;
a second semiconductor layer formed on the active layer;
a current resisting layer covering a portion of the second semiconductor layer and exposing another portion of the second semiconductor layer;
a current spreading layer covering the second semiconductor layer and the current resisting layer, wherein the current spreading layer is formed with a reverse trapezoidal concave over a top of the current resisting layer;
a first electrode disposed on the first semiconductor layer; and
a second electrode disposed within the reverse trapezoidal concave.
2. The semiconductor light emitting structure according to claim 1 , further comprising an electrode contacting layer conformably covering the surface of the current spreading layer and the reverse trapezoidal concave, such that the second electrode is disposed on the electrode contacting layer within the reverse trapezoidal concave.
3. The semiconductor light emitting structure according to claim 1 , wherein the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer.
4. The semiconductor light emitting structure according to claim 1 , further comprising:
a buffer layer disposed between the substrate and the first semiconductor layer.
5. The semiconductor light emitting structure according to claim 1 , wherein the current resisting layer is formed by a nitride, an oxide or a carbide.
6. The semiconductor light emitting structure according to claim 2 , wherein the electrode contacting layer is formed by indium tin oxide (ITO) or indium zinc oxide (IZO).
7. The semiconductor light emitting structure according to claim 1 , wherein the current resisting layer is a semiconductor layer containing N-type dopants.
8. The semiconductor light emitting structure according to claim 1 , wherein the current spreading layer is a semiconductor layer containing P-type dopants.
9. The semiconductor light emitting structure according to claim 1 , wherein an energy gap of the current resisting layer is greater than an energy gap of the current spreading layer.
10. The semiconductor light emitting structure according to claim 1 , wherein the first semiconductor layer, the second semiconductor layer, the active layer are formed by a material selected from one or a combination of the groups composed of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN).
11. The semiconductor light emitting structure according to claim 1 , wherein the current resisting layer is separated from the reverse trapezoidal concave by a gap.