Nitride semiconductor light-emitting system
A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.
1. A nitride semiconductor light-emitting system comprising:
a nitride semiconductor light-emitting device;
a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component;
a cap adhered to the base mount; and
a lead pin penetrating the opening, wherein:
the lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order,
the base mount includes a base having the opening, and a post connected to the base,
the base has a principal surface facing the nitride semiconductor light-emitting device, and a fixed surface opposite to the principal surface, and
a bottom surface of the buffer member close to the fixed surface is recessed from the fixed surface of the base such that the bottom surface of the buffer member does not extend to the fixed surface of the base.
2. The device of claim 1 , wherein the base mount contains Cu as a main component.
3. The device of claim 2 , wherein the buffer member is made of any one metal of Fe, Ni, Co, Cr, Ti, Al, Mg, Mo, or W, or an alloy containing any of the metal.
4. The device of claim 3 , wherein the buffer member is made of Fe or an Fe alloy.
5. The device of claim 1 , wherein a thermal expansion coefficient of the buffer member is equal to or greater than a thermal expansion coefficient of the insulating member.
6. The device of claim 5 , wherein a thermal expansion coefficient of the lead pin is equal to or smaller than the thermal expansion coefficient of the insulating member.
7. The device of claim 5 , wherein a thermal expansion coefficient of the base mount is equal to or greater than the thermal expansion coefficient of the buffer member.
8. The device of claim 1 , wherein an atmosphere enclosed by the base mount and the cap contains oxygen.
9. The device of claim 1 , wherein light emitted from the nitride semiconductor light-emitting device has a density of 100 MW/cm 2 or greater.
10. The device of claim 1 , further comprising:
a fixture holding the base, wherein
the fixture covers part of the opening.
11. The device of claim 1 , further comprising:
a plurality of lead pins, wherein
the opening and the buffer member are provided for each of the plurality of lead pins.
12. The device of claim 1 , further comprising:
a plurality of lead pins, wherein
the opening and the buffer member are shared by the plurality of lead pins, and
the buffer member has a plurality of openings penetrated by the plurality of lead pins.
13. The device of claim 1 , wherein:
the insulating member contains silicon oxide as a component, and
the buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.
14. The device of claim 1 , wherein:
the post has a device fixing surface perpendicular to the principal surface of the base, and
each of the base and the post contains Cu as a main component.
15. The device of claim 1 , wherein the bottom surface of the buffer member is not flush with the fixed surface of the base.