Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.
1. A solid-state imaging device comprising:
a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal;
color filters associated with the pixels and having a plurality of color filter components;
microlenses configured to converge the incident light through the color filters to the photoelectric conversion elements;
a light shielding portion disposed between respective ones of the plurality of color filter components; and
a transparent film having a nonplanar upper surface disposed between the color filters and the light shielding portion, wherein a thickness of the transparent film is less than a thickness of the light shielding portion.
2. The solid-state imaging device according to claim 1 , wherein the transparent film includes a thermoplastic resin material selected from the group including an acrylic resin, a phenolic resin, a siloxane resin, a copolymer thereof, and an epoxy resin.
3. The solid-state imaging device according to claim 1 , wherein the color filters are planarized.
4. The solid-state imaging device according to claim 1 , wherein the transparent film is provided between one surface of the light shielding film and the color filters.
5. The solid-state imaging device according to claim 1 , further comprising:
an insulator film between the photoelectric conversion elements and the color filters.
6. The solid-state imaging device according to claim 1 , wherein the transparent film comprises an oxide film.
7. The solid-state imaging device according to claim 6 , wherein the oxide film is provided on one surface of the light shielding portion.
8. The solid-state imaging device according to claim 1 ,
wherein the light shielding portion includes
first light shielding portions formed on side portions of the color filter components, and
second light shielding portions formed at corner portions of the pixel regions,
wherein a distance from the front side of the pixel to an end surface of the second light shielding portion toward the microlens is shorter than a distance from the front side of the pixel to an end surface of the first light shielding portion toward the microlens.
9. The solid-state imaging device according to claim 1 , wherein the microlenses are disposed directly on respective ones of the color filters.
10. The solid-state imagining device according to claim 1 , further comprising:
a semiconductor substrate having a first side as a light incident side, and a second side opposite to the first side,
wherein the semiconductor substrate comprises the photoelectric conversion element.
11. The solid-state imaging device according to claim 10 , wherein the thickness of the semiconductor substrate is 3-5 μm.
12. The solid-state imaging device according to claim 10 , further comprising:
a plurality of transistors disposed adjacent to the second side of the semiconductor substrate.
13. The solid-state imaging device according to claim 12 , wherein the plurality of transistors comprises a transfer transistor associated with the photoelectric conversion element.
14. The solid-state imaging device according to claim 12 , wherein the plurality of transistors comprises a reset transistor and an amplification transistor.
15. The solid-state imaging device according to claim 14 , wherein the plurality of transistors further comprises a select transistor configured to selectively enable operation of the amplification transistor.
16. The solid-state imaging device according to claim 12 , further comprising:
a drive circuit configured to drive the plurality of transistors; and
a column circuit coupled to a signal line and configured to perform correlated double sampling of the electrical signal.
17. The solid-state imaging device according to claim 12 , wherein a wiring layer is disposed adjacent to the second side of the semiconductor substrate.
18. The solid-state imaging device according to claim 17 , wherein the wiring layer comprises a signal line connected to at least one transistor of the plurality of transistors.
19. The solid-state imaging device according to claim 17 , further comprising:
a support substrate disposed on the wiring layer.
20. The solid-state imaging device according to claim 1 , further comprising:
an element separation region disposed between adjacent ones of the photoelectric conversion elements.
21. The solid-state imaging device according to claim 1 , further comprising:
a digital signal processing circuit configured to receive and process a digital signal.
22. The solid-state imaging device according to claim 21 , further comprising:
a memory configured to receive and store a processed digital signal from the digital signal processing circuit.
23. The solid-state imaging device according to claim 1 , wherein the thickness of the color filters is 100 nm to 1 μm.
24. The solid-state imaging device according to claim 1 , wherein the color filters include filters of at least two different colors selected from green, red, and blue.
25. The solid-state imaging device according to 24 , wherein the color filter includes an ND filter.
26. The solid-state imaging device according to claim 1 , wherein the transparent film comprises a nitride film.
27. The solid-state imaging device according to claim 1 , wherein the light shielding portion is a material selected from the group consisting of aluminum and tungsten.
28. The solid-state imaging device according to claim 1 , wherein the light shielding portion is a material selected from the group consisting of carbon black and titanium black.
29. A method of manufacturing a solid-state imaging device, the method comprising:
forming a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal;
forming a light shielding portion to be provided between a plurality of color filter components of color filters;
depositing a transparent film having a nonplanar upper surface on the light shielding portion, wherein a thickness of the transparent film is less than a thickness of the light shielding portion;
forming the color filters on the transparent film between the light shielding portions; and
forming on the color filters microlenses configured to converge the incident light through the color filters onto the photoelectric conversion elements.
30. An electronic apparatus comprising:
a solid-state imaging device including:
a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal,
color filters associated with the pixels and having a plurality of color filter components,
microlenses configured to converge the incident light through the color filters to the photoelectric conversion elements,
a light shielding portion disposed between respective ones of the plurality of color filter components, and
a transparent film having a nonplanar upper surface disposed between the color filters and the light shielding portion, wherein a thickness of the transparent film is less than a thickness of the light shielding portion;
an optical lens configured to guide the incident light to the photoelectric conversion elements; and
a signal processing circuit configured to process the electrical signal.