Semiconductor structures having low resistance paths throughout a wafer

1. A method, comprising:

forming at least one low resistance conduction path into an interlevel dielectric material and an underlying substrate of a wafer, within dicing channels of the wafer;

forming a barrier layer in direct contact with the low resistance conductive path; and

forming an electroplated seed layer in direct contact with the barrier layer.

2. The method of claim 1 , wherein the forming of the at least one low resistance conduction path comprises:

etching at least one via into the interlevel dielectric material and the underlying substrate;

lining the least one via with an insulator material; and

depositing metal material in the least one via, over the insulator material.

3. The method of claim 2 , wherein the forming of the seed layer comprises:

forming an insulator layer on the interlevel dielectric material;

patterning the insulator layer to form an opening which exposes the metal material in the at least one via; and

forming the seed layer on the insulator layer including within the opening.

4. The method of claim 2 , wherein the at least one metal filled via is about 10 micron tall, with a resultant resistance of about 2 mΩ/ , and the seed layer is a copper seed layer with a thickness of about 10 nm with a resistance of about 18Ω/ .

5. The method of claim 1 , wherein the at least one low resistance conduction path is at least one back end of the line wiring structure formed directly on the seed layer.

6. The method of claim 1 , wherein the forming the at least one low resistance conduction path comprises:

etching at least two vias into the insulating layer and the underlying substrate;

depositing an oxide material on the sidewalls of the at least two vias;

depositing an adhesion layer on the oxide material; and

depositing copper in the at least two vias and over the adhesion layer.

7. A method, comprising:

forming at least two metal filled vias within an insulator layer and a substrate of a wafer, and within a dicing channel of the wafer; and

forming a barrier layer on a patterned upper insulator layer, in direct contact with the least two metal filled vias;

forming an electroplated seed layer in direct contact with the barrier layer,

wherein the forming of the electroplated seed layer comprises:

forming the upper insulator layer on the insulator layer;

patterning the upper insulator layer to form an opening which exposes the at least two metal filled vias; and

forming the electroplated seed layer on a surface of the upper insulator layer including within the opening.

8. The method of claim 7 , wherein the forming of the at least two metal filled vias comprises:

etching at least two vias into the insulator layer and the underlying substrate;

lining the at least two vias with an insulator material; and

depositing the metal material in the at least two vias.

9. The method of claim 7 , wherein the forming the at least one low resistance conduction path comprises:

etching at least two vias into the insulating layer and the underlying substrate;

depositing an oxide material on the sidewalls of the at least two vias;

depositing an adhesion layer on the oxide material; and

depositing copper in the at least two vias and over the adhesion layer.

10. A method, comprising:

forming at least two metal filled vias into an insulating layer and an underlying substrate of a wafer, wherein the at least two metal filled vias are formed within dicing channels of the wafer;

forming an upper insulator layer on the insulating layer;

patterning the upper insulator layer to form an opening which exposes the at least two metal filled vias; and

forming an electroplated seed layer in the opening in electrical contact with the at least two metal filled vias.

11. The method of claim 10 , wherein the forming the at least two metal filled vias comprises:

etching at least two via holes into the insulating layer and the underlying substrate;

depositing an oxide material on the sidewalls of the at least two via holes;

depositing an adhesion layer on the oxide material; and

depositing a copper in the at least two via holes and over the adhesion layer.

12. The method of claim 10 , wherein each of the at least two metal filled vias are about 10 micron tall, with a resultant resistance of about 2 mΩ/ , and the seed layer is a copper seed layer with a thickness of about 10 nm with a resistance of about 18Ω/ .