Method for fabricating light-emitting diode device
View Patent ↗The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the buffer layer between the insulating micro patterns are exposed. The insulating micro patterns and the buffer layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
1. A method for fabricating a light-emitting diode device, comprising:
providing a carrier having a first surface and a second surface on opposite sides of the carrier, wherein the first surface has a plurality of insulating micro patterns, and wherein the carrier and the plurality of insulating micro patterns are formed by different materials;
growing a buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer on the first surface of the carrier in sequence to form a light-emitting lamination layer;
providing a substrate for the second-type semiconductor layer of the light-emitting lamination layer to bond on;
performing a laser lift-off process to lift off the carrier from the light-emitting lamination layer, and surfaces of the plurality of insulating micro patterns and a surface of the buffer layer between the plurality of insulating micro patterns are exposed;
removing the plurality of insulating micro patterns and the buffer layer to form a plurality of recess structures on the first-type semiconductor layer; and
performing a surface-roughing process on a plurality of surfaces of the plurality of recess structures.
2. The method for fabricating a light-emitting diode device as claimed in claim 1 , further comprising:
performing an etching process on an area of the light-emitting lamination layer to partially remove the second-type semiconductor layer, the light-emitting layer and first-type semiconductor layer to expose a portion of the first-type semiconductor layer after forming the light-emitting lamination layer, thereby forming a light-emitting mesa structure; and
respectively forming a first electrode and a second electrode on the first-type semiconductor layer and the second-type semiconductor layer of the light-emitting mesa structure, wherein the light-emitting mesa structure bonds on the substrate through the first electrode and the second electrode.
3. The method for fabricating a light-emitting diode device as claimed in claim 1 , wherein the substrate is a semiconductor substrate comprising a pad layer and an ohmic contact layer, and the substrate bonds to the second-type semiconductor layer of the light-emitting lamination layer through the ohmic contact layer.
4. The method for fabricating a light-emitting diode device as claimed in claim 3 , furthering comprising forming a first-type electrode on the plurality of surfaces of the plurality of recess structure of the first-type semiconductor layer.
5. The method for fabricating a light-emitting diode device as claimed in claim 1 , wherein the plurality of insulating micro patterns is formed of silicon oxide materials.
6. The method for fabricating a light-emitting diode device as claimed in claim 5 , wherein the plurality of insulating micro patterns are removed by a wet etching.
7. The method for fabricating a light-emitting diode device as claimed in claim 6 , wherein the plurality of insulating micro patterns are removed by a buffer oxide etching (BOE).
8. The method for fabricating a light-emitting diode device as claimed in claim 7 , wherein the surface-roughing process is performed by a dry etching or a wet etching.
9. The method for fabricating a light-emitting diode device as claimed in claim 1 , wherein the size of the plurality of recess structure of the first-type semiconductor layer is in μm scale, and the size is in a range between about 1 μm and 5 μm.
10. The method for fabricating a light-emitting diode device as claimed in claim 1 , wherein the size of the plurality of surfaces of the plurality of recess structures is in nm scale, and the size is in a range between about 10 nm and 1000 nm after performing the surface-roughing process.