STACKED DIE PACKAGE WITH REDISTRIBUTION LAYER
A packaged semiconductor device has lead fingers that define a cavity, and a first die located within the cavity. A second die abuts an inactive side of the first die. The second die is electrically connected to one or more of the lead fingers. A redistribution layer abuts an active side of the first die. Metal structures are situated on an outer surface of the redistribution layer. The redistribution layer electrically connects (i) one or more of the metal structures to one or more of the lead fingers and (ii) one or more of the metal structures to one or more bond pads on the active side of the first die.
1 . A packaged semiconductor device, comprising:
a plurality of lead fingers defining a central cavity;
a first die located within the cavity;
a second die abutting an inactive side of the first die, wherein the second die is electrically connected to one or more of the lead fingers;
a redistribution layer abutting an active side of the first die; and
a plurality of metal structures situated on an outer surface of the redistribution layer, wherein the redistribution layer electrically connects (i) one or more of the metal structures to one or more of the lead fingers and (ii) one or more of the metal structures to one or more bond pads on the active side of the first die.
2 . The packaged semiconductor device of claim 1 , further comprising a third die stacked on the second die, wherein the third die is electrically connected to one or more of the lead fingers.
3 . The packaged semiconductor device of claim 1 , wherein an inactive side of the second die abuts the inactive side of the first die.
4 . The packaged semiconductor device of claim 1 , wherein the second die is mounted on one or more of the lead fingers.
5 . The packaged semiconductor device of claim 4 , wherein an inactive side of the second die is mounted on one or more of the lead fingers.
6 . The packaged semiconductor device of claim 5 , further comprising a first set of bond wires that electrically connect bond pads on the second die to corresponding ones of the lead fingers.
7 . The packaged semiconductor device of claim 6 , further comprising:
a third die stacked on the second die; and
a second set of bond wires that electrically connect bond pads on the third die to corresponding other ones of the lead fingers.
8 . The packaged semiconductor device of claim 1 , wherein the redistribution layer provides fan-out from the first die to the metal structures.
9 . A method of assembling a packaged semiconductor device, comprising:
(a) mounting a first die within a cavity defined by a plurality of lead fingers;
(b) attaching a second die to an inactive side of the first die;
(c) electrically connecting the second die to one or more of the lead fingers; and
(d) forming a redistribution layer that abuts an active side of the first die, wherein:
a plurality of metal structures are situated on an outer surface of the redistribution layer; and
the redistribution layer electrically connects (i) one or more of the metal structures to one or more of the lead fingers and (ii) one or more of the metal structures to one or more bond pads on the active side of the first die.
10 . The method of claim 9 , wherein:
step (b) further comprises attaching a third die on an active side of the second die; and
step (c) further comprises electrically connecting the third die to one or more of the lead fingers.
11 . The method of claim 9 , wherein step (a) comprises abutting an inactive side of the second die to the inactive side of the first die.
12 . The method of claim 9 , wherein step (b) comprises mounting the second die on one or more of the lead fingers.
13 . The method of claim 12 , wherein step (b) further comprises mounting an inactive side of the second die on one or more of the lead fingers.
14 . The method of claim 13 , wherein step (c) comprises electrically connecting the second die to one or more of the lead fingers with a first set of bond wires.
15 . The method of claim 14 , wherein:
step (b) further comprises attaching a third die on an active side of the second die; and
step (c) further comprises electrically connecting the third die to one or more of the lead fingers with a second set of bond wires.
16 . The method of claim 9 , wherein the redistribution layer provides fan-out from the first die to the metal structures.
17 . The method of claim 9 , wherein:
the method comprises, mounting, before step (a), the plurality of lead fingers onto tape;
step (a) comprises abutting an active side of the first die to the tape;
the method comprises encapsulating, after step (c) but before step (d), at least a portion of the lead fingers, the first die, and the second die in a molding compound; and
step (d) comprises removing the tape before forming the redistribution layer.
18 . A packaged semiconductor device assembled in accordance with the method recited in claim 9 .