Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
View Patent ↗A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).
1. A ferroelectric memory cell, comprising:
a source;
a drain;
a ferroelectric crystalline material having a polar and chiral crystal structure without inversion symmetry, the ferroelectric crystalline material located between the source and the drain, the ferroelectric crystalline material including a compound selected from the group consisting of V 2 P 2 O 9 , K 3 Mo 3 ScO 12 , BaYCo 4 O 8 , CaNa 2 Al 4 Si 4 O 16 , and LaNa 3 V 2 O 8 , the ferroelectric crystalline material also including at least one dopant selected from the group consisting of niobium, tantalum, rubidium, selenium, tin, and indium; and
a gate electrode over the ferroelectric crystalline material.
2. The ferroelectric memory cell of claim 1 , wherein the ferroelectric crystalline material has an orthorhombic crystal structure corresponding to a Pbc2 1 space group.
3. The ferroelectric memory cell of claim 1 , wherein the ferroelectric crystalline material has an orthorhombic crystal structure corresponding to a Pca2 1 space group.
4. The ferroelectric memory cell of claim 1 , wherein the ferroelectric crystalline material comprises CaNa 2 Al 4 Si 4 O 16 .
5. The ferroelectric memory cell of claim 1 , wherein a crystal structure of the ferroelectric crystalline material is orthorhombic.
6. The ferroelectric memory cell of claim 1 , wherein the ferroelectric crystalline material is at least substantially free of zirconium and hafnium.
7. The ferroelectric memory cell of claim 1 , wherein the ferroelectric crystalline material is further mechanically strained.
8. The ferroelectric memory device of claim 1 , wherein the ferroelectric crystalline material comprises a thickness in a range extending from about 2 nm to about 100 nm.
9. A method of forming a semiconductor structure, the method comprising:
forming a source;
forming a drain;
forming a ferroelectric crystalline material having a polar a chiral crystal structure without inversion symmetry through an inversion center, the ferroelectric crystalline material located between the source and the drain, the ferroelectric crystalline material including c compound selected from the group consisting of V 2 P 2 O 9 , K 3 Mo 3 ScO 12 , BaYCo 4 O 8 , CaNa 2 Al 4 Si 4 O 16 , and LaNa 3 V 2 O 8 , the ferroelectric crystalline material further including at least one dopant selected from the group consisting of niobium, tantalum, rubidium, selenium, tin, and indium; and
forming a gate electrode proximate the ferroelectric crystalline material.
10. The method of claim 9 , further comprising annealing the ferroelectric crystalline material and altering a crystal structure of the ferroelectric crystalline material.
11. The method of claim 9 , further comprising mechanically straining the ferroelectric crystalline material to stabilize the polar and chiral crystal structure of the ferroelectric crystalline material.
12. The method of claim 9 , further comprising forming the ferroelectric crystalline material to have an orthorhombic crystal structure and a space group selected from the group consisting of Pca2 1 and Pbc2 1 .
13. The method of claim 9 , further comprising forming the ferroelectric crystalline material to have a crystal structure selected from the group consisting of orthorhombic and tetragonal structures.
14. The ferroelectric memory cell of claim 1 , wherein the at least one dopant consists of niobium and tantalum present in the ferroelectric crystalline material at between about 0.2% by weight and about 10% by weight.
15. The ferroelectric memory cell of claim 1 , wherein the at least one dopant constitutes between about 0.05% by weight and about 30% by weight of the ferroelectric crystalline material.