Liquid Crystal Display Device and Electronic Device Including the Same
A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.
1 . (canceled)
2 . A semiconductor device comprising:
a shift register comprising:
a first wiring; and
a second wiring,
wherein the first wiring is capable of supplying an electric potential,
wherein the second wiring is capable of supplying a signal,
wherein the second wiring has an opening portion,
wherein the first wiring has a first width,
wherein the second wiring has a second width, and
wherein the first width is smaller than the second width.
3 . The semiconductor device according to claim 2 ,
wherein the shift register comprises a first transistor and a second transistor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the first wiring,
wherein the other one of the source electrode and the drain electrode of the first transistor is electrically connected to a pixel,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the second wiring, and
wherein the other one of the source electrode and the drain electrode of the second transistor is electrically connected to the pixel.
4 . The semiconductor device according to claim 3 , wherein the first transistor and the second transistor are the same polarity.
5 . The semiconductor device according to claim 3 , wherein each of the first transistor and the second transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel region.
6 . A semiconductor device comprising:
a shift register comprising:
a first wiring;
a second wiring; and
a third wiring,
wherein the first wiring is capable of supplying an electric potential,
wherein the second wiring is capable of supplying a first signal,
wherein the third wiring is capable of supplying a second signal,
wherein the second wiring has a first opening portion,
wherein the third wiring has a second opening portion,
wherein the first wiring has a first width,
wherein the second wiring has a second width,
wherein the third wiring has a third width,
wherein the first width is smaller than the second width, and
wherein the first width is smaller than the third width.
7 . The semiconductor device according to claim 6 ,
wherein the first opening portion has a fourth width,
wherein the second opening portion has a fifth width, and
wherein the fourth width is approximately equal to the fifth width.
8 . The semiconductor device according to claim 6 , wherein a length in a longitudinal direction of the first opening portion is approximately equal to a length in a longitudinal direction of the second opening portion.
9 . The semiconductor device according to claim 6 , wherein the second width is approximately equal to the third width.
10 . The semiconductor device according to claim 6 ,
wherein the shift register comprises a first transistor and a second transistor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the first wiring,
wherein the other one of the source electrode and the drain electrode of the first transistor is electrically connected to a pixel,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the second wiring, and
wherein the other one of the source electrode and the drain electrode of the second transistor is electrically connected to the pixel.
11 . The semiconductor device according to claim 10 , wherein the first transistor and the second transistor are the same polarity.
12 . The semiconductor device according to claim 10 , wherein each of the first transistor and the second transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel region.