IP Library Granted Patent US 9,646,917
Granted Patent B2
US 9,646,917 · App. 14/289,860 · Granted May 9, 2017

Low CTE component with wire bond interconnects

Inventors: Rajesh Katkar (San Jose, CA); Cyprian Emeka Uzoh (San Jose, CA)
Assignee: Invensas Corporation
H01L23/481H01L21/486H01L21/76898H01L23/49827H01L24/43H01L24/46H01L2224/023H01L2224/4502H01L2924/00014
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Quick Facts
Patent No.
US 9,646,917
App. No.
14/289,860
Granted
May 9, 2017
Kind
B2
Abstract

A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such method may include forming a structure having wire bonds extending in an axial direction within one of more openings in an element and each wire bond spaced at least partially apart from a wall of the opening within which it extends, the element consisting essentially of a material having a coefficient of thermal expansion (“CTE”) of less than 10 parts per million per degree Celsius (“ppm/° C.”). First contacts can then be provided at a first surface of the component and second contacts provided at a second surface of the component facing in a direction opposite from the first surface, the first contacts electrically coupled with the second contacts through the wire bonds.

Claims (15)

1. A method of fabricating a component, comprising:

forming a structure including:

providing a first element having a plurality of wire bonds extending upwardly away from the first element; and

then inserting the wire bonds into one or more openings in a second element consisting essentially of a material having a coefficient of thermal expansion (“CTE”) of less than 10 parts per million per degree Celsius (“ppm/° C.”),

wherein each of the plurality of wire bonds extends in an axial direction within an opening of the one or more openings in the second element, and each of the plurality of wire bonds is spaced at least partially apart from a wall of the opening within which it extends, the structure having first contacts at a first surface of the component and second contacts at a second surface of the component facing in a direction opposite from the first surface, wherein electrical paths between the first contacts and the second contacts extend through the wire bonds.

2. The method of claim 1 , wherein the openings in the second element are uncovered by any portion of the second element when the inserting of the wire bonds is performed.

3. The method of claim 1 , further comprising forming at least one of: a first redistribution layer electrically coupled between the wire bonds and the first contacts, or a second redistribution layer electrically coupled between the wire bonds and the second contacts.

4. The method of claim 1 , wherein the first element comprises metallic elements of a first redistribution layer, and the wire bonds are joined to the metallic elements prior to the inserting the wire bonds.

5. The method of claim 1 , wherein inserting the wire bonds comprises inserting individual wire bonds of the plurality of wire bonds into respective openings in the second element, such that each wire bond is separated from each other wire bond by material of the second element.

6. The method of claim 5 , wherein the openings are blind openings when the individual wire bonds are inserted therein, and the method further comprises reducing a thickness of the second element after the inserting to provide access to ends of the wire bonds.

7. The method of claim 1 , wherein the inserting comprises inserting some of the plurality of the wire bonds into a same opening of the plurality of openings.

8. The method of claim 1 , further comprising after the inserting, providing an electrically insulative material within the openings in contact with the wire bonds.

9. The method of claim 1 , wherein the second element includes a plurality of active devices, wherein at least some of the first or the second contacts are electrically coupled with the plurality of active devices.

10. The method of claim 9 , wherein the second element includes a monocrystalline semiconductor region, at least some of the active devices are disposed at least partially within the monocrystalline semiconductor region, and the openings extend at least partially through the monocrystalline semiconductor region.

11. The method of claim 1 , wherein at least one of the first contacts are defined by the first ends of the wire bonds, or the second contacts are defined by the second ends of the wire bonds.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0668 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0751 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2014
From: KATKAR, RAJESH; UZOH, CYPRIAN EMEKA
To: INVENSAS CORPORATION
Reel/Frame 033011/0480 →
Continuity (1)
Related Publication 20150348873A1 · Dec 3, 2015