Semiconductor device and cascode circuit
A semiconductor device and a cascode circuit are disclosed herein. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first electrode, a second electrode, a control electrode, and a control pad. The second transistor includes a first electrode, a second electrode, a control electrode, and a control pad. The second electrode of the first transistor is configured to receive a first predetermined voltage. The control electrode of the first transistor is configured to receive an input signal. The first electrode of the second transistor configured to receive a second predetermined voltage. The second electrode of the second transistor is electrically coupled to the first electrode of the first transistor. The control pad is disposed between the first electrode of the second transistor and the control electrode of the second transistor, and is configured to receive a first adjust signal.
1. A semiconductor device, comprising:
a first transistor, comprising:
a first electrode;
a second electrode configured to receive a first predetermined voltage; and
a control electrode configured to receive an input signal; and
a second transistor comprising:
a first electrode configured to receive a second predetermined voltage;
a second electrode electrically coupled to the first terminal of the first transistor;
a control electrode; and
a control pad disposed between the first electrode of the second transistor and the control electrode of the second transistor, and configured to receive a first adjust signal.
2. The semiconductor device of claim 1 , wherein the control electrode of the second transistor is electrically coupled to the second electrode of the first transistor.
3. The semiconductor device of claim 2 , wherein the second transistor is disposed on a substrate, and the substrate is electrically coupled to the control pad of the second transistor.
4. The semiconductor device of claim 1 , wherein the second transistor is disposed on a substrate, and the substrate is configured to receive a second adjust signal.
5. The semiconductor device of claim 1 , wherein the control electrode of the second transistor is electrically coupled to the control pad.
6. The semiconductor device of claim 1 , wherein the first transistor is a normally-on transistor, and the second transistor is a normally-off transistor.
7. The semiconductor device of claim 1 , wherein the control pad comprises a field plate.
8. The semiconductor device of claim 1 , wherein the first transistor and the second transistor are formed on a same chip.
9. The semiconductor device of claim 1 , wherein the first transistor is formed on a first chip, the second transistor is formed on a second chip, and the first chip and the second chip are packaged in a package.
10. The semiconductor device of claim 9 , wherein the package comprises a metal substrate or a leadframe.
11. A semiconductor device comprising:
a substrate;
a high voltage transistor disposed on the substrate, the high voltage transistor comprising a first source electrode, a first drain electrode, a first gate electrode, and a field plate disposed between the first gate electrode and the first drain electrode;
a low voltage transistor disposed on the substrate, the low voltage transistor comprising a second source electrode, a second drain electrode, and a second gate electrode, the second drain electrode being electrically coupled to the first source electrode;
a first terminal coupled to the first drain electrode;
a second terminal coupled to the second source electrode; S 1
a third terminal coupled to the second gate electrode for receiving a control signal; and
a fourth terminal coupled to the field plate of the high voltage transistor for controlling a capacitance of the semiconductor device.
12. The semiconductor device of claim 11 , wherein the first gate electrode is electrically coupled to the second source electrode.
13. The semiconductor device of claim 11 , wherein the first gate electrode is electrically coupled to the substrate.
14. The semiconductor device of claim 11 , wherein the high voltage transistor and the low voltage transistor are formed on a same chip.
15. The semiconductor device of claim 11 , wherein the high voltage transistor is formed on a first chip, the low voltage transistor is formed on a second chip, and the first chip and the second chip are packaged in a package.
16. The semiconductor device of claim 15 , wherein the package comprises a metal substrate or a leadframe.
17. The semiconductor device of claim 11 , wherein the high voltage transistor is a normally-on transistor, and the low voltage transistor is a normally-off transistor.
18. The semiconductor device of claim 11 , wherein the high voltage transistor is a nitride-based high electron mobility transistor (HEMT) and the low voltage transistor is a silicon-based transistor.
19. The semiconductor device of claim 11 , wherein the first gate electrode is electrically coupled to the field plate of the high voltage transistor.
20. The semiconductor device of claim 11 , wherein the field plate of the high voltage transistor is coupled to the substrate.