Semiconductor device with encapsulated lead frame contact area and related methods
A semiconductor device may include an IC, and lead frame contact areas adjacent the IC. Each lead frame contact area may have a lead opening. The semiconductor device may include bond wires, each bond wire coupling a respective lead frame contact area with the IC. The semiconductor device may include encapsulation material surrounding the IC, the lead frame contact areas, and the bond wires, and leads. Each lead may extend through a respective lead opening and outwardly from the encapsulation material.
1. A semiconductor device comprising:
at least one integrated circuit (IC);
a plurality of lead frame contact pads adjacent said at least one IC, each lead frame contact pad having a lead opening therein;
a plurality of bond wires, each bond wire coupling a respective lead frame contact pad with said at least one IC;
encapsulation material surrounding said at least one IC, said plurality of lead frame contact pads, and said plurality of bond wires, said encapsulation material extending over the lead openings of said plurality of lead frame contact pads; and
a plurality of curved leads, each curved lead extending through a respective lead opening and outwardly from said encapsulation material, each curved lead extending laterally outward toward a sidewall of said encapsulation material and defining a gap with said encapsulation material.
2. The semiconductor device of claim 1 further comprising a plurality of solder joints, each solder joint attaching a respective curved lead within a corresponding lead opening.
3. The semiconductor device of claim 2 wherein each of said lead openings comprises a lead through-opening extending through a corresponding lead frame contact pad; and wherein each of said plurality of solder joints fills a corresponding lead through-opening.
4. The semiconductor device of claim 2 wherein each of said plurality of solder joints is laterally spaced outwardly from a respective bond wire.
5. The semiconductor device of claim 2 wherein each of said plurality of solder joints has a ball shape.
6. The semiconductor device of claim 1 further comprising at least one IC die pad below said at least one IC.
7. The semiconductor device of claim 6 further comprising an adhesive layer between said at least one IC and said at least one IC die pad.
8. The semiconductor device of claim 1 wherein each lead frame contact pad has a rectangular shape.
9. The semiconductor device of claim 1 wherein said plurality of lead frame contact pads and said plurality of curved leads comprise copper.
10. An electronic device comprising:
a semiconductor device comprising
at least one integrated circuit (IC),
a plurality of lead frame contact pads adjacent said at least one IC, each lead frame contact pad having a lead opening therein,
a plurality of bond wires, each bond wire coupling a respective lead frame contact pad with said at least one IC,
encapsulation material surrounding said at least one IC, said plurality of lead frame contact pads, and said plurality of bond wires, said encapsulation material extending over the lead openings of said plurality of lead frame contact pads, and
a plurality of curved leads, each curved lead extending through a respective lead opening and outwardly from said encapsulation material, each curved lead extending laterally outward toward a sidewall of said encapsulation material and defining a gap with said encapsulation material; and
a printed circuit board carrying said semiconductor device.
11. The electronic device of claim 10 wherein said semiconductor device comprises a plurality of solder joints, each solder joint attaching a respective curved lead within a corresponding lead opening.
12. The electronic device of claim 11 wherein each of said lead openings comprises a lead through-opening extending through a corresponding lead frame contact pad; and wherein each of said plurality of solder joints fills a corresponding lead through-opening.
13. The electronic device of claim 11 wherein each of said plurality of solder joints is laterally spaced outwardly from a respective bond wire.
14. The electronic device of claim 10 wherein said semiconductor device comprises at least one IC die pad below said at least one IC.
15. A method for making a semiconductor device comprising:
forming a plurality of lead frame contact pads adjacent at least one integrated circuit (IC), each lead frame contact pad having a lead opening therein;
coupling a respective bond wire between each lead frame contact pad and the at least one IC;
surrounding the at least one IC, the plurality of lead frame contact pads, and the plurality of bond wires with an encapsulation material, the encapsulation material extending over the lead openings of the plurality of lead frame contact pads; and
coupling each of a plurality of curved leads to extend through a respective lead opening and outwardly from the encapsulation material, each curved lead extending laterally outward toward a sidewall of the encapsulation material and defining a gap with the encapsulation material.
16. The method of claim 15 further comprising forming a plurality of solder joints, each solder joint attaching a respective curved lead within a corresponding lead opening.
17. The method of claim 16 wherein each of the lead openings comprises a lead through-opening extending through a corresponding lead frame contact pad; and wherein each of the plurality of solder joints fills a corresponding lead through-opening.
18. The method of claim 16 wherein each of the plurality of solder joints is laterally spaced outwardly from a respective bond wire.
19. The method of claim 16 wherein each of the solder joints has a ball shape.
20. The method of claim 15 further comprising forming at least one IC die pad below the at least one IC.
21. A semiconductor device comprising:
at least one integrated circuit (IC);
a plurality of lead frame contact pads adjacent said at least one IC, each lead frame contact pad having a lead opening therein, each lead frame contact pad having a rectangular shape;
a plurality of bond wires, each bond wire coupling a respective lead frame contact pad with said at least one IC;
encapsulation material surrounding said at least one IC, said plurality of lead frame contact pads, and said plurality of bond wires, said encapsulation material extending over the lead openings of said plurality of lead frame contact pads;
a plurality of curved leads, each curved lead extending through a respective lead opening and outwardly from said encapsulation material, each curved lead extending laterally outward toward a sidewall of said encapsulation material and defining a gap with said encapsulation material; and
at least one IC die pad being below said at least one IC.
22. The semiconductor device of claim 21 further comprising a plurality of solder joints, each solder joint attaching a respective curved lead within a corresponding lead opening.
23. The semiconductor device of claim 22 wherein each of said lead openings comprises a lead through-opening extending through a corresponding lead frame contact pad; and wherein each of said plurality of solder joints fills a corresponding lead through-opening.