Solid-state imaging apparatus, method of manufacturing the same, and camera
A method of manufacturing a solid-state imaging apparatus, comprising preparing a semiconductor substrate including a photoelectric conversion portion and a structure which includes an insulating member formed on the photoelectric conversion portion and a wiring pattern formed in the insulating member, forming a film made of SiC and/or SiCN on the structure, forming an opening immediately above the photoelectric conversion portion by removing part of the film and part of the insulating member, and depositing a member in the opening and on the film, and forming a light-guide portion by polishing the member so as to expose the film.
1. A solid-state imaging apparatus comprising:
a photoelectric conversion portion disposed on a semiconductor substrate;
a structure including an insulating member disposed on the semiconductor substrate, and a wiring pattern being arranged in the insulating member;
a film disposed on the structure and separated from the wiring pattern by part of the insulating member, the film being made of at least one of SiC and SiCN;
a light-guide portion embedded in the film and the insulating member so as to guide light to the photoelectric conversion portion; and
an insulating film disposed on an upper surface of the light-guide portion and an upper surface of the film, the insulating film having a lower surface contacting the upper surface of the light-guide portion and the upper surface of the film.
2. The apparatus according to claim 1 , wherein the film is made of SiC, and satisfies at least one of conditions
that a refractive index falls within a range from 1.75 (inclusive) to 1.90 (inclusive),
that a relative dielectric constant falls within a range from 4.2 (inclusive) to 5.4 (inclusive),
that a hardness falls within a range from 9.5 [GPa] (inclusive) to 13 [GPa] (inclusive), and
that an elastic modulus falls within a range from 70 [GPa] (inclusive) to 110 [GPa] (inclusive).
3. The apparatus according to claim 1 , wherein the film is made of SiCN, and satisfies at least one of conditions
that a refractive index falls within a range from 1.85 (inclusive) to 1.95 (inclusive),
that a relative dielectric constant falls within a range from 5.0 (inclusive) to 5.5 (inclusive),
that a hardness falls within a range from 14 [GPa] (inclusive) to 15 [GPa] (inclusive), and
that an elastic modulus falls within a range from 110 [GPa] (inclusive) to 130 [GPa] (inclusive).
4. The apparatus according to claim 1 , wherein a member forming the light-guide portion has a refractive index higher than that of the insulating member.
5. A camera comprising:
a solid-state imaging apparatus comprising:
a photoelectric conversion portion disposed on a semiconductor substrate,
a structure including an insulating member disposed on the semiconductor substrate, and a wiring pattern being arranged in the insulating member,
a film disposed on the structure and separated from the wiring pattern by part of the insulating member, the film being made of at least one of SiC and SiCN,
a light-guide portion embedded in the film and the insulating member so as to guide light to the photoelectric conversion portion, and
an insulating film disposed on an upper surface of the light-guide portion and an upper surface of the film, the insulating film having a lower surface contacting the upper surface of the light-guide portion and the upper surface of the film; and
a processor configured to process a signal output from the solid-state imaging apparatus.
6. The apparatus according to claim 1 , further comprising a reflection member formed on a side surface of the member.
7. The apparatus according to claim 1 , wherein an air gap is formed between a side surface of the member and the insulating member.
8. A solid-state imaging apparatus comprising:
a photoelectric conversion portion disposed in a semiconductor substrate;
a structure including an insulating member made of silicon oxide and disposed on the semiconductor substrate, and a wiring pattern being arranged in the insulating member, the insulating member having an opening located above the photoelectric conversion portion;
a first film disposed on an upper surface of the structure and separated from the wiring pattern by part of the insulating member, the first film being made of at least one of SiC and SiCN;
a member made of silicon nitride and embedded in the opening of the insulating member; and
a second film disposed on an upper surface of the first film and an upper surface of the member, the second film having a lower surface contacting the upper surface of the first film and the upper surface of the member.
9. The apparatus according to claim 8 , wherein the upper surface of the member and the upper surface of the first film are in the same plane as each other.
10. The apparatus according to claim 8 , wherein an electrode is disposed on the second film.
11. The apparatus according to claim 8 , wherein a lens made of silicon nitride is disposed on the second film.
12. A camera comprising:
a solid-state imaging apparatus comprising:
a photoelectric conversion portion disposed in a semiconductor substrate,
a structure including an insulating member made of silicon oxide and disposed on the semiconductor substrate, and a wiring pattern being arranged in the insulating member, the insulating member having an opening located above the photoelectric conversion portion,
a first film disposed on an upper surface of the structure and separated from the wiring pattern by part of the insulating member, the first film being made of at least one of SiC and SiCN,
a member made of silicon nitride and embedded in the opening of the insulating member, and
a second film disposed on an upper surface of the first film and an upper surface of the member, the second film having a lower surface contacting the upper surface of the first film and the upper surface of the member; and
a processor configured to process a signal output from the solid-state imaging apparatus.
13. The apparatus according to claim 1 , wherein the structure includes a plurality of metal layers, and the wiring pattern is provided in uppermost one of the plurality of metal layers.
14. The apparatus according to claim 8 , wherein the structure includes a plurality of metal layers, and the wiring pattern is provided in uppermost one of the plurality of metal layers.
15. The apparatus according to claim 1 , wherein the lower surface of the insulating film is a flat surface.
16. The apparatus according to claim 1 , wherein the film is made of a material different from a material of the light-guide portion.
17. The apparatus according to claim 1 , wherein the upper surface of the film is made of a material different from a material of the upper surface of the light-guide portion.