Scintillators and applications thereof
Scintillators of various constructions and methods of making and using the same are provided. In some embodiments, a scintillator comprises at least one radiation absorption region and at least one spatially discrete radiative exciton recombination region.
1. A polycrystalline scintillator comprising:
sintered crystalline semiconductor particles, the crystalline semiconductor particles formed of a radiation absorption region of a first semiconductor material and a spatially discrete radiative carrier recombination region of a second semiconductor material operable to receive carriers produced in the radiation absorption region.
2. The polycrystalline scintillator of claim 1 , wherein the crystalline semiconductor particles have core-shell architecture.
3. The polycrystalline scintillator of claim 2 , wherein the radiative carrier recombination region is at the core of the semiconductor particles and the radiative absorption region is part of the shell surrounding the core.
4. The polycrystalline scintillator of claim 3 , wherein shells of the sintered crystalline semiconductor particles form a continuous radiation absorption matrix with radiative carrier recombination regions dispersed in the continuous radiation absorption matrix.
5. The polycrystalline scintillator of claim 2 , wherein the crystalline semiconductor particles have a size ranging from about 20 nm to about 100 μm.
6. The polycrystalline scintillator of claim 2 , wherein the radiation absorption region of one or more of the crystalline semiconductor particles has a size ranging from about 10 nm to about 500 nm.
7. The polycrystalline scintillator of claim 1 , wherein the radiation absorption region has a carrier mobility of at least about 1·10 −4 cm 2 /V·s.
8. The polycrystalline scintillator of claim 1 , wherein the radiation absorption region has a carrier mobility ranging from about 1·10 −4 cm 2 /V·s to about 1000 cm 2 /V·s.
9. The polycrystalline scintillator of claim 1 , wherein the radiation absorption region has a carrier mobility ranging from about 1·10 −2 cm 2 /V·s to about 100 cm 2 /V·s.
10. The polycrystalline scintillator of claim 1 , wherein the first semiconductor material is a II/VI semiconductor.
11. The polycrystalline scintillator of claim 1 , wherein the second semiconductor material is a II/VI semiconductor material.
12. The polycrystalline scintillator of claim 1 , wherein the first semiconductor material and the second semiconductor material are binary II/VI semiconductors.
13. A method of making a polycrystalline scintillator comprising:
providing crystalline semiconductor particles, the crystalline semiconductor particles formed of a radiation absorption region of a first semiconductor material and a spatially discrete radiative carrier recombination region of a second semiconductor material operable to receive carriers produced in the radiation absorption region; and
sintering the crystalline semiconductor particles.
14. The method of claim 13 , wherein the crystalline semiconductor particles have core-shell architecture.
15. The method of claim 14 , wherein the radiative carrier recombination region is at the core of the semiconductor particles and the radiative absorption region is part of the shell surrounding the core.
16. The method of claim 15 , wherein sintering the crystalline semiconductor particles forms a continuous radiation absorption matrix with radiative carrier recombination regions dispersed in the continuous radiation absorption matrix.
17. The method of claim 14 , wherein the crystalline semiconductor particles have a size ranging from about 20 nm to about 100 μm.
18. The method of claim 14 , wherein the radiation absorption region of one or more of the crystalline semiconductor particles has a size ranging from about 10 nm to about 500 nm.
19. The method of claim 13 , wherein the radiation absorption region has a carrier mobility of at least about 1·10 −4 cm 2 /V·s.
20. The method of claim 13 , wherein the radiation absorption region has a carrier mobility ranging from about 1·10 −4 cm 2 /V·s to about 1000 cm 2 /V·s.