Microwave plasma apparatus and method for materials processing
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.
1. A microwave plasma apparatus for processing a material, comprising:
a plasma chamber;
a microwave radiation source for generating microwave radiation;
a waveguide guiding the microwave radiation from the microwave radiation source to the plasma chamber, the waveguide including a shell defining a longitudinal axis;
a gas supply in fluid communication with the plasma chamber for providing a gas to the plasma chamber; and
a material feeding system in communication with the plasma chamber for introducing a process material to the plasma chamber, the material feeding system comprising:
an emitter wire formed at least in part from the process material and protruding into the plasma chamber;
a gas injector that imparts to the gas a velocity into the chamber and substantially along a surface of the emitter wire; and
means for advancing the emitter wire into the plasma chamber;
wherein the microwave radiation couples to the gas to form a plasma;
wherein the gas injector and emitter wire are positioned relative to each other such that the gas and the emitter wire are in direct fluid contact upstream of the plasma;
wherein the emitter wire is advanced into the chamber in a direction perpendicular to the longitudinal axis defined by the shell such that the plasma comes into contact with the advancing emitter wire and erodes a portion of the advancing emitter wire; and
wherein the process material, through contact with the plasma, forms a product material.
2. The apparatus according to claim 1 , further comprising a gas injector that causes the gas to flow laminarly and substantially parallel to an axis of the plasma chamber.
3. The apparatus according to claim 2 , wherein a portion of the process gas is used as a shrouding gas.
4. The apparatus according to claim 2 , further comprising a second supply in fluid communication with the plasma chamber for providing a shrouding gas to the plasma chamber.
5. The apparatus according to claim 4 , further comprising a swirl structure that causes the shrouding gas to flow in a substantially laminar flow or in a substantially helical swirl between the plasma and an inner surface of the plasma chamber.
6. The apparatus according to claim 1 , wherein the process material comprises oxide ceramics, nitride ceramics, carbide ceramics, rare earth ceramics, metals, or metal alloys.
7. The apparatus according to claim 1 , wherein the plasma chamber includes an outlet, and the plasma extends past the outlet.
8. The apparatus according to claim 1 , wherein the plasma chamber includes a gas injector that causes the gas to flow laminarly or substantially parallel to an axis of the plasma chamber.
9. The apparatus according to claim 1 , wherein the plasma chamber includes an outlet, and wherein a target is arranged proximate the outlet so that the product material impacts on the target.
10. The apparatus according to claim 9 , wherein the target is a substrate to be coated.
11. A method for processing a material in a plasma chamber, comprising the steps of:
providing microwave radiation and a gas in a plasma chamber such that the microwave radiation couples to the gas to generate a plasma having a substantially laminar flow along an axis; and
introducing a process material into the substantially laminar flow of the plasma in a direction substantially parallel to the axis of the substantially laminar flow;
wherein the process material, through contact with the plasma, forms a product material; and
wherein the step of introducing the process material includes advancing into the plasma chamber an emitter wire formed at least in part from the process material and in direct fluid contact with the gas such that the plasma comes into contact with the advancing emitter wire and erodes a portion of the advancing emitter wire.
12. The method according to claim 11 , wherein the gas provided in the plasma chamber is ionized.
13. The method according to claim 11 , wherein the gas flows are laminar and substantially parallel to an axis of the plasma chamber.
14. The method according to claim 13 , wherein a portion of the process gas is used as a shrouding gas.
15. The method according to claim 13 , further comprises the step of providing a shrouding gas in the plasma chamber.
16. The method according to claim 15 , wherein the shrouding gas flows in a substantially laminar flow or a substantially helical swirl between the plasma jet and an inner surface of the plasma chamber.
17. The method according to claim 11 , further comprising a step of discharging the product material from the plasma chamber.