Photonic lock based high bandwidth photodetector
The technique introduced herein decouples the traditional relationship between bandwidth and responsivity, thereby providing a more flexible and wider photodetector design space. In certain embodiments of the technique introduced here, a photodetector device includes a first mirror, a second mirror, and a light absorption region positioned between the first and second reflective mirrors. For example, the first mirror can be a partial mirror, and the second mirror can be a high-reflectivity mirror. The light absorption region is positioned to absorb incident light that is passed through the first mirror and reflected between the first and second mirrors. The first mirror can be configured to exhibit a reflectivity that causes an amount of light energy that escapes from the first mirror, after the light is reflected back by the second mirror, to be zero or near zero.
1. A silicon-based germanium photodetector device comprising:
a first reflective region;
a second reflective region; and
a light absorption region positioned between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions,
wherein the first reflective region is such constructed that a reflectivity of the first reflective region is substantially equal to a one-circulation attenuation coefficient of the light absorption region, wherein the first reflective region is responsible for causing a destructive interference upon light escaping from the first reflective region so as to reduce an amount of light that escapes from the first reflective region,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer (1) having at least one of: oxide, or nitride, and (2) being positioned closer to the light absorption region than the metal coating, wherein the combination causes a reflectivity of the second reflective region to exceed ninety percent (90%), and wherein the light absorption region includes germanium.
2. The device of claim 1 , wherein (a) the first reflective region's reflectivity, (b) the second reflective region's reflectivity, and (c) an attenuation coefficient of the light absorption region are collectively configured such that the light resonates between the first and second reflective regions.
3. The device of claim 1 , wherein the first reflective region causes a total amount of light energy that escapes from the first reflective region to be less than 10% of incident light energy.
4. The device of claim 3 , wherein the one-circulation attenuation coefficient indicates a ratio of remainder light energy over entrance light energy in one circulation.
5. The device of claim 1 , wherein the first reflective region's reflectivity is less than a reflectivity of the second reflective region.
6. The device of claim 1 , further comprising:
a waveguide configured to pass the light through the first reflective region into the light absorption region.
7. The device of claim 1 , wherein the light absorption region comprises a light absorption material that is disposed on substantially the same planar surface as the first and second reflective regions.
8. The device of claim 1 , wherein the light absorption region comprises (a) a cavity layer disposed on substantially the same planar surface as the first and second reflective regions, and (b) a light absorption layer that is disposed over the cavity layer,
wherein the light absorption layer and the cavity layer are of different materials.
9. The device of claim 1 , wherein the first reflective region is disposed over the light absorption region, and wherein the light absorption region is disposed over the second reflective region.
10. The device of claim 1 , wherein the light absorption region comprises a photodiode or an avalanche photodiode layered structure.
11. The device of claim 1 , wherein the first and second reflective regions are selected from a group including: a distributed Bragg reflector (DBR), a metallic reflector, a corner mirror, and a reflection trench.
12. The device of claim 1 , wherein the light absorption region comprises a Group III-V compound, germanium, or a combination thereof.
13. The device of claim 1 , wherein the first reflective region is responsible to reduce a back reflection of incident light from the first reflective region when the incident light first enters the first reflective region.
14. The device of claim 13 , wherein the back reflection is reduced to substantially zero.
15. A method for forming a photodetector device, the method comprising:
forming a light absorption region, a first reflective region and a second reflective region over a substrate, wherein the first and second reflective regions are formed on substantially the same planar surface; and
forming a light absorption region between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions,
wherein the first reflective region is such constructed that a reflectivity of the first reflective region is substantially equal to a one-circulation attenuation coefficient of the light absorption region, wherein the first reflective region is responsible for causing a destructive interference upon light escaping from the first reflective region so as to reduce an amount of light that escapes from the first reflective region,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer (1) having at least one of: oxide, or nitride, and (2) being positioned closer to the light absorption region than the metal coating, wherein the combination causes a reflectivity of the second reflective region to exceed ninety percent (90%), and
wherein the light absorption region includes germanium.
16. The method of claim 15 , wherein (a) the first reflective region's reflectivity, (b) the second reflective region's reflectivity, and (c) an attenuation coefficient of the light absorption region are collectively configured such that the light resonates between the first and second reflective regions.
17. The method of claim 15 , wherein the first reflective region causes a total amount of light energy that escapes from the first reflective region to be less than 10% of incident light energy.
18. The method of claim 15 , wherein the first reflective region's reflectivity is less than a reflectivity of the second reflective region.
19. The method of claim 15 , further comprising:
forming a waveguide over the substrate, wherein the waveguide is configured to pass the light through the first reflective region into the light absorption region.
20. The method of claim 15 , wherein forming the light absorption region comprises:
disposing a light absorption material on substantially the same planar surface as the first and second reflective regions.
21. The method of claim 15 , wherein forming the light absorption region comprises:
during the step of forming the first and the second reflective regions, disposing a cavity layer on substantially the same planar surface as the first and second reflective regions; and
disposing a light absorption layer over the cavity layer, wherein the light absorption layer and the cavity layer are of different materials.
22. A method for forming a silicon-based germanium photodetector device, the method comprising:
forming a light absorption region; and
forming a first and a second reflective regions;
wherein the light absorption region is positioned between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions, and
wherein the first reflective region is such constructed that a reflectivity of the first reflective region is substantially equal to a one-circulation attenuation coefficient of the light absorption region, wherein the first reflective region is responsible for causing a destructive interference upon light escaping from the first reflective region so as to reduce an amount of light that escapes from the first reflective region,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer (1) having at least one of: oxide, or nitride, and (2) being positioned closer to the light absorption region than the metal coating, wherein the combination causes a reflectivity of the second reflective region to exceed ninety percent (90%), and
wherein the light absorption region includes germanium.
23. The method of claim 22 , wherein (a) the first reflective region's reflectivity, (b) the second reflective region's reflectivity, and (c) an attenuation coefficient of the light absorption region are collectively configured such that the light resonates between the first and second reflective regions.
24. The method of claim 22 , wherein the first reflective region causes a total amount of light energy that escapes from the first reflective region to be less than 10% of incident light energy.
25. The method of claim 22 , wherein the first reflective region's reflectivity is less than a reflectivity of the second reflective region.
26. An optoelectronic system for sensing optical signals, the system comprising:
a microcontroller;
a memory; and
an optoelectronic apparatus including a silicon-based germanium photodetector that includes:
a first reflective region;
a second reflective region; and
a light absorption region positioned between the first and second reflective regions so as to absorb light passed through the first reflective region and reflected between the first and second reflective regions,
wherein the first reflective region is such constructed that a reflectivity of the first reflective region is substantially equal to a one-circulation attenuation coefficient of the light absorption region,
wherein the first reflective region is responsible for causing a destructive interference upon light escaping from the first reflective region so as to reduce an amount of light that escapes from the first reflective region,
wherein the second reflective region includes a combination of a dielectric layer and a metal coating, the dielectric layer (1) having at least one of: oxide, or nitride, and (2) being positioned closer to the light absorption region than the metal coating, wherein the combination causes a reflectivity of the second reflective region to exceed ninety percent (90%),
wherein the light absorption region includes germanium,
wherein (a) the first reflective region's reflectivity, (b) the second reflective region's reflectivity, and (c) an attenuation coefficient of the light absorption region are collectively configured such that the light resonates between the first and second reflective regions, and
wherein the one-circulation attenuation coefficient indicates a ratio of remainder light energy over entrance light energy in one circulation.