Methods for forming metal organic tungsten for middle of the line (MOL) applications
Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.
1. A method of processing a substrate disposed within a substrate processing chamber, comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten-containing barrier layer directly onto the tungsten seed layer, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer directly onto the tungsten-containing barrier layer to fill the feature to the first surface via a plasma enhanced chemical vapor deposition process.
2. The method of claim 1 , wherein the feature has an aspect ratio of depth to width of greater than about 5:1.
3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.
4. The method of claim 3 , wherein the hydrogen-containing gas is H 2 or NH 3 .
5. The method of claim 1 , wherein the first gas further comprises a carrier gas.
6. The method of claim 5 , wherein the carrier gas is argon, helium, or nitrogen.
7. The method of claim 6 , wherein a flow rate of the carrier gas is about 300 sccm to about 600 sccm.
8. The method of claim 1 , wherein the processing chamber is at a pressure of about 5 Torr to about 20 Torr.
9. The method of claim 1 , wherein the metal organic tungsten precursor is one of W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .
10. The method of claim 1 , wherein the tungsten-containing barrier layer has a thickness of about 15 angstroms to about 40 angstroms.
11. A method of processing a substrate disposed within a substrate processing chamber, comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
depositing a tungsten-containing barrier layer directly onto the tungsten seed layer by exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer, via a plasma enhanced chemical vapor deposition process, directly onto the tungsten-containing barrier layer to fill the feature to the first surface.
12. The method of claim 11 , wherein the first gas further comprises a hydrogen-containing gas.
13. The method of claim 12 , wherein the hydrogen-containing gas is H 2 or NH 3 .
14. The method of claim 11 , wherein the first gas further comprises a carrier gas.
15. The method of claim 14 , wherein the carrier gas is argon, helium, or nitrogen.
16. The method of claim 15 , wherein a flow rate of the carrier gas is about 300 sccm to about 600 sccm.
17. The method of claim 11 , wherein the processing chamber is at a pressure of about 5 Torr to about 20 Torr.
18. The method of claim 11 , wherein the metal organic tungsten precursor is one of W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .
19. The method of claim 11 , wherein the tungsten-containing barrier layer has a thickness of about 15 angstroms to about 40 angstroms.
20. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of processing a substrate disposed within a substrate processing chamber to be performed, the method comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten-containing barrier layer directly atop the tungsten seed layer, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer directly over the tungsten-containing barrier layer to fill the feature to the first surface via a plasma enhanced chemical vapor deposition process.