MOL resistor with metal grid heat shield
An semiconductor structure, method of fabrication therefor, and design structure therefor is provided. A thermal grid is formed over at least a portion of a substrate. An insulating layer is formed over at least a portion of the thermal grid. A resistor is formed over at least a portion of the insulating layer. A buried interconnect is connected to the thermal grid via at least one contact. The buried interconnect is adapted to receive thermal energy from the thermal grid via the at least one contact.
1. A semiconductor structure comprising:
a substrate;
a thermal grid over at least a portion of the substrate and within a first insulating layer;
a resistor over at least a portion of the thermal grid and disposed on an upper surface of a portion of the first insulating layer; and
a buried interconnect connected to the thermal grid by a pair of contacts, the buried interconnect being planarized to about a surface of the thermal grid within the first insulating layer,
wherein the pair of contacts extend at least partially within the first insulating layer and include a first contact connecting the thermal grid to a thermally conductive layer and a second contact connecting the buried interconnect to the thermally conductive layer.
2. The semiconductor structure of claim 1 , wherein the resistor is on the upper surface of the portion of the first insulating layer such that the first insulating layer is disposed at least partially between the resistor and the thermal grid.
3. The semiconductor structure of claim 1 , further comprising:
a second insulating layer over at least a portion of the resistor,
wherein the thermally conductive layer is disposed over at least a portion of the second insulating layer.
4. The semiconductor structure of claim 1 , wherein the thermal grid is adapted to receive thermal energy from the resistor.
5. The semiconductor structure of claim 1 , wherein the first contact is disposed at least partially within the second insulating layer, and wherein the first contact is adapted to receive thermal energy from the thermal grid.
6. The semiconductor structure of claim 1 , wherein the second contact is disposed at least partially within the second insulating layer, and wherein the second contact is adapted to receive thermal energy from the thermal grid.
7. The semiconductor structure of claim 1 , wherein the buried interconnect is adapted to receive thermal energy from the thermal grid via the second contact, the thermally conductive layer, and the first contact.
8. The semiconductor structure of claim 1 , wherein the buried interconnect at least partially within the substrate.
9. The semiconductor structure of claim 1 , wherein the second contact is adapted to receive thermal energy from the first contact via the thermally conductive layer.
10. A method, comprising:
forming a thermal grid over at least a portion of a substrate within a first insulating layer;
forming a resistor over at least a portion of the thermal grid and on an upper surface of a portion of the first insulating layer;
forming a buried interconnect within the first insulating layer substantially adjacent to the thermal grid;
planarizing the buried interconnect to about a surface of the thermal grid; and
forming a pair of contacts extending at least partially within the first insulating layer and including a first contact connecting the thermal grid to a thermally conductive layer and a second contact connecting the buried interconnect to the thermally conductive layer.
11. The method of claim 10 , wherein forming the resistor further comprises:
forming the resistor on the upper surface of the portion of the first — nsulating layer such that the first insulating layer is disposed at least partially between the resistor and the thermal grid.
12. The method of claim 10 , further comprising:
forming a second insulating layer over at least a portion of the resistor; and
forming the thermally conductive layer over at least a portion of the second insulating layer.
13. The method of claim 10 , wherein the thermal grid is adapted to receive thermal energy from the resistor.
14. The method of claim 10 , further comprising:
forming the first contact at least partially within the second insulating layer, wherein the first contact is adapted to receive thermal energy from the thermal grid.
15. The method of claim 10 , further comprising:
forming a second contact at least partially within the second insulating layer, wherein the second contact is adapted to receive thermal energy from the thermal grid.
16. The method of claim 10 , wherein the buried interconnect is adapted to receive thermal energy from the thermal grid via the second contact, the thermally conductive layer, and the first contact.
17. The method of claim 10 , further comprising:
forming the buried interconnect at least partially within the substrate.
18. The method of claim 10 , further comprising:
forming the second contact adapted to receive thermal energy from the first contact via a thermally conductive layer.