Magnetic memory device and method of magnetic domain wall motion
A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.
1. A magnetic memory device comprising:
plural laminated structures, each laminated structure comprising; plural first magnetic layers; and a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers;
a piezoelectric body provided to surround the plural laminated structures; and
a first electrode and a second electrode applying voltage to the piezoelectric body.
2. A magnetic memory system comprising a plurality of the magnetic memory devices according to claim 1 , the magnetic memory devices being aligned in a row direction or in a column direction.
3. The magnetic memory device according to claim 1 , wherein
the first electrode and the second electrode are extended parallel to a row direction or a column direction.
4. The magnetic memory device according to claim 1 , wherein
a sign of a magnetostriction constant of the first magnetic layers is different from a sign of a magnetostriction constant of the second magnetic layer, or an absolute value of the magnetostriction constant of the first magnetic layers is smaller than an absolute value of the magnetostriction constant of the second magnetic layer.
5. The magnetic memory device according to claim 1 , wherein:
the first magnetic layer and the second magnetic layer comprising GdFe, GdCo, GdFeCo, TbFe, TbCo, TbFeCo, GdTbFe, GdTbCo, DyFe, DyCo, or DyFeCo.
6. A magnetic memory device comprising:
plural laminated structures arranged in a row direction and a column direction, each laminated structure comprising: plural first magnetic layers; and a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers;
a piezoelectric body provided to surround the plural laminated structures; and
a first electrode and a second electrode applying voltage to the piezoelectric body.
7. The magnetic memory device according to claim 6 , wherein
the first electrode and the second electrode are extended parallel to a row direction or a column direction.
8. The magnetic memory device according to claim 6 , wherein
a sign of a magnetostriction constant of the first magnetic layers is different from a sign of a magnetostriction constant of the second magnetic layer, or an absolute value of the magnetostriction constant of the first magnetic layers is smaller than an absolute value of the magnetostriction constant of the second magnetic layer.
9. The magnetic memory device according to claim 6 , wherein:
the first magnetic layer and the second magnetic layer comprising GdFe, GdCo, GdFeCo, TbFe, TbCo, TbFeCo, GdTbFe, GdTbCo, DyFe, DyCo, or DyFeCo.
10. A method of magnetic domain wall motion of the magnetic memory device of claim 1 , comprising:
a first step applying a current between the first electrode and the second electrode for a first time duration; and
a second step applying a voltage to the piezoelectric body for a second time duration, wherein
a completing time of the second step is after a completing time of the first time.