Semiconductor device having groove-shaped via-hole
View Patent ↗The semiconductor device has insulating films 40, 42 formed over a substrate 10 ; an interconnection 58 buried in at least a surface side of the insulating films 40, 42 ; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66 a having a pattern bent at a right angle; and buried conductors 70, 72 a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66 a . A groove-shaped via-hole 66 a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66 . Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.
1. A semiconductor device comprising:
a rectangular semiconductor substrate including a semiconductor circuit region and four corners;
a first insulating film formed above the rectangular semiconductor substrate;
a first conductive layer formed in the first insulating film;
a second insulating film formed above the first insulating film; and
a plurality of guard rings surrounding the semiconductor circuit region;
wherein:
each of the guard rings includes a groove-shaped via-hole formed in the second insulating film;
the groove-shaped via-hole includes a pattern bent twice each time at an angle of larger than 90° at each of the four corners;
the groove-shaped via-hole is bent totally at 90° at each of the four corners of the rectangular semiconductor substrate;
a copper layer formed in the groove-shaped via-hole and connected to the first conductive layer; and
the first insulating film is a first SiOC based film and the second insulation film is a second SiOC based film.
2. The semiconductor device according to claim 1 , wherein the first insulating film and the second insulating film are substantially same.
3. The semiconductor device according to claim 1 , further comprising
a first tantalum layer formed in the first insulating film and located between the first conductive layer and the first insulating film; and
a second tantalum layer formed in the groove-shaped via-hole and located between the copper layer and the second insulation film,
wherein the first conductive layer includes copper.
4. The semiconductor device according to claim 3 , wherein the first insulating film and the second insulating film are substantially same.
5. The semiconductor device of claim 1 , wherein the plurality of guard rings consists of two guard rings.
6. The semiconductor device of claim 1 , wherein the plurality of guard rings consists of three guard rings.
7. The semiconductor device of claim 1 , wherein the plurality of guard rings consists of four guard rings.
8. The semiconductor device according to claim 1 , wherein
the first conductive layer surrounds the semiconductor circuit region,
the first conductive layer is bent twice each time at an angle of larger than 90° at each of the four corners, and
the first conductive layer is bent in total at 90° at each of the four corners of the rectangular semiconductor substrate.
9. The semiconductor device of claim 8 , wherein the first conductive layer is bent twice each time at an angle of approximately 135° at each of the four corners.
10. The semiconductor device of claim 8 , wherein the plurality of guard rings consists of two guard rings.
11. The semiconductor device of claim 8 , wherein the plurality of guard rings consists of three guard rings.
12. The semiconductor device of claim 8 , wherein the plurality of guard rings consists of four guard rings.