Dynamic power FET switching
Various techniques for dynamic power FET switching are disclosed. In some embodiments, a device comprises an array of two or more independently switchable power MOSFETs that are configured to sense current in a high current mode and a low current mode as well as circuitry for automatically switching from the low current mode to the high current mode when sensed current is above a threshold to switch to the high current mode.
1. A device, comprising:
an array of two or more independently switchable power MOSFETs (metal-oxide-semiconductor field-effect transistors), wherein the power MOSFETs are further configured to sense current in a high current mode and a low current mode, wherein in the low current mode a sensed current output signal is scaled; and
circuitry for automatically switching from the low current mode to the high current mode when sensed current is above a threshold to switch to the high current mode.
2. The device of claim 1 , wherein each MOSFET facilitates power passing to a load.
3. The device of claim 1 , wherein the two or more MOSFETs are of different sizes.
4. The device of claim 1 , wherein the two or more MOSFETs are arranged in a lateral configuration.
5. The device of claim 1 , wherein at least one of the two or more MOSFETs is switched off during the low current mode.
6. The device of claim 1 , wherein the device further comprises circuitry configured to automatically switch to the low current mode when sensed current is below a threshold to switch to the low current mode.
7. The device of claim 1 , wherein the device further comprises circuitry configured to block switching to the low current mode when sensed current is above a threshold to switch to the low current mode.
8. The device of claim 1 , wherein in the high current mode all of the MOSFETs are switched on.
9. The device of claim 1 , wherein the MOSFETs are configured to sense current in a plurality of high current modes, a plurality of low current modes, or both.
10. The device of claim 1 , wherein the threshold to automatically switch from the low current mode to the high current mode comprises approximately 1 A.
11. The device of claim 1 , wherein a current sensing range of approximately 50 mA to 10 A is provided by the low current mode and the high current mode.
12. The device of claim 1 , wherein the device further comprises circuitry for over current protection.
13. The device of claim 1 , wherein the device further comprises circuitry for over temperature protection.
14. The device of claim 1 , wherein the device further comprises NVM (non-volatile memory) for programming one or more parameters.
15. The device of claim 1 , wherein the device comprises a power switch with current sense capability.
16. The device of claim 1 , wherein the device comprises a load switch.
17. The device of claim 1 , wherein the device comprises a power rail switch.
18. The device of claim 1 , wherein the device comprises an integrated circuit.
19. A method, comprising:
configuring an array of two or more independently switchable power MOSFETs (metal-oxide-semiconductor field-effect transistors) to sense current in a high current mode and a low current mode, wherein in the low current mode a sensed current output signal is scaled; and
configuring circuitry for automatically switching from the low current mode to the high current mode when sensed current is above a threshold to switch to the high current mode.
20. The method of claim 19 , wherein each MOSFET facilitates power passing to a load.
21. The method of claim 19 , wherein the two or more MOSFETs are of different sizes.
22. The method of claim 19 , wherein the two or more MOSFETs are arranged in a lateral configuration.
23. The method of claim 19 , wherein at least one of the two or more MOSFETs is switched off during the low current mode.
24. The method of claim 19 , further comprising configuring circuitry for automatically switching to the low current mode when sensed current is below a threshold to switch to the low current mode.
25. The method of claim 19 , further comprising configuring circuitry for blocking switching to the low current mode when sensed current is above a threshold to switch to the low current mode.
26. The method of claim 19 , wherein in the high current mode all of the MOSFETs are switched on.
27. The method of claim 19 , wherein the MOSFETs are configured to sense current in a plurality of high current modes, a plurality of low current modes, or both.
28. The method of claim 19 , wherein the threshold to automatically switch from the low current mode to the high current mode comprises approximately 1 A.
29. The method of claim 19 , wherein a current sensing range of approximately 50 mA to 10 A is provided by the low current mode and the high current mode.
30. The method of claim 19 , further comprising configuring circuitry for over current protection.
31. The method of claim 19 , further comprising configuring circuitry for over temperature protection.
32. The method of claim 19 , further comprising configuring NVM (non-volatile memory) for programming one or more parameters.