Light emitting device and manufacturing method for same

1. A light emitting device comprising:

a support substrate;

a reflective layer on the support substrate;

a first layer including ohmic contact regions and a plurality of insulating regions on the reflective layer;

a light emitting semiconductor layer disposed on the first layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;

an electrode on a top surface of the first conductive semiconductor layer;

a light extracting structure on the top surface of the first conductive semiconductor layer,

a roughness disposed over the plurality of the insulating regions; and

a passivation layer disposed on top and side surfaces of the light emitting semiconductor layer, the passivation layer being in contact with the first layer,

wherein the light extracting structure is disposed adjacent to the electrode, and

wherein the insulating regions extend radially from a center of the ohmic contact regions.

2. The light emitting device of claim 1 , further comprising a diffusion barrier layer between the support substrate and the reflective layer.

3. The light emitting device of claim 2 , further comprising a wafer bonding layer between the diffusion barrier layer and the support substrate.

4. The light emitting device of claim 1 , wherein the wafer bonding layer including a first wafer bonding layers and a second wafer bonding layers.

5. The light emitting device of claim 1 , wherein the light extracting structure contacts the top surface of the first conductive semiconductor layer.

6. The light emitting device of claim 1 , wherein a lowermost surface of the electrode is lower than a top surface of the active layer.

7. The light emitting device of claim 1 , wherein a top surface of the electrode is higher than a top surface of the light extracting structure.

8. The light emitting device of claim 1 , further comprising a die-bonding layer is disposed under the support substrate.

9. The light emitting device of claim 1 , wherein the light extracting structure is formed in a prescribed pattern obtained by selectively etching a nitride layer which is formed on the first conductive semiconductor layer and does not include impurities.

10. The light emitting device of claim 1 , wherein the ohmic contact regions include at least one selected from the group consisting of ITO, ZnO, IZO, and NiO—Au.

11. A light emitting device comprising:

a reflective layer;

a first layer including ohmic contact regions and a plurality of insulation regions on the reflective layer;

a light emitting semiconductor layer on the reflective layer and including a plurality of light emitting structures disposed separate from each other;

an electrode on the light emitting semiconductor layer to overlap a portion of each of the plurality of light emitting structures;

a light extracting structure on the light emitting semiconductor layer, and

a roughness disposed over a plurality of insulating regions,

wherein a width of a top surface of the electrode is smaller than a width of a flat surface of the light emitting semiconductor layer between the light extracting structures, and

wherein the insulating regions extend radially from a center of the ohmic contact regions.

12. The light emitting device of claim 1 , wherein the light emitting semiconductor layer includes a first light emitting structure and a second light emitting structure separate from the first light emitting structure, and wherein the first electrode is disposed to overlap a portion of both the first and second light emitting structures.

13. The light emitting device of claim 11 , wherein the light extracting structure is disposed on a top surface of the light emitting semiconductor layer, adjacent to the electrode on opposite sides of the electrode.