Multi level programmable memory structure
A memory structure includes a memory cell, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first charge storage structure disposed in the first dielectric structure and a second charge storage structure disposed in the second dielectric structure. The first charge storage structure is a singular charge storage unit and the second charge storage structure comprises two charge storage units which are physically separated. A channel output line physically connected to the channel layer. A first dielectric layer is disposed on the first gate at two sides of the stacked structure. A first source or drain and a second source or drain are disposed on the first dielectric layer and located at two sides of the channel layer.
1. A memory structure including a memory cell, the memory cell comprising:
a first gate disposed on a substrate;
a stacked structure, comprising:
a first dielectric structure, a channel layer, a second dielectric structure and a second gate sequentially disposed on the first gate;
a first charge storage structure disposed in the first dielectric structure; and
a second charge storage structure disposed in the second dielectric structure, wherein the first charge storage structure is a singular charge storage unit and the second charge storage structure comprises two charge storage units which are physically separated;
a channel output line physically connected to the channel layer;
a first dielectric layer disposed on the first gate at two sides of the stacked structure; and
a first source or drain and a second source or drain disposed on the first dielectric layer and located at two sides of the channel layer.
2. The memory structure as claimed in claim 1 , wherein the two charge storage units in the second charge storage structure are isolated from each other through the second dielectric structure, and the first dielectric structure comprises a second dielectric layer and a third dielectric layer, wherein the second dielectric layer is disposed between the first gate and the first charge storage structure and the third dielectric layer is disposed between the first charge storage structure and the channel layer.
3. The memory structure as claimed in claim 1 , wherein the memory structure comprises stacked memory cells.
4. The memory structure as claimed in claim 1 , wherein the first gate is a first word line and the second gate is a portion of a second word line, and the second word line does not need to be aligned with the first word line.
5. A memory structure including a memory cell, the memory cell comprising:
a first gate disposed on a substrate;
a stacked structure, comprising:
a first dielectric structure, a channel layer, a second dielectric structure and a second gate sequentially disposed on the first gate;
a first charge storage structure disposed in the first dielectric structure; and
a second charge storage structure disposed in the second dielectric structure, wherein the first charge storage structure comprises two charge storage units which are physically separated and the second charge storage structure is a singular charge storage unit;
a channel output line physically connected to the channel layer;
a first dielectric layer disposed on the first gate at two sides of the stacked structure; and
a first source or drain and a second source or drain disposed on the first dielectric layer and located at two sides of the channel layer.
6. The memory structure as claimed in claim 5 , wherein the two charge storage units in the first charge storage structure are isolated from each other through the first dielectric structure, and the second dielectric structure comprises a fourth dielectric layer and a fifth dielectric layer, wherein the fourth dielectric layer is disposed between the channel layer and the second charge storage structure and the fifth dielectric layer is disposed between the second charge storage structure and the second gate.
7. The memory structure as claimed in claim 5 , wherein the memory structure comprises stacked memory cells.
8. The memory structure as claimed in claim 5 , wherein the first gate is a first word line and the second gate is a portion of a second word line, and the second word line does not need to be aligned with the first word line.