Method for fabricating light-emitting element using chamber with mass spectrometer
A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight in a film-formation chamber, which is monitored by a mass spectrometer, does not exceed a specific value during the evaporation. This method allows the formation of a light-emitting element having an improved lifetime.
1. A method for fabricating a semiconductor device, the method comprising:
forming a film by evaporating an organic compound in a film-formation chamber,
wherein a partial pressure of a component in the film-formation chamber is monitored during the evaporation by using a mass spectrometer, and
wherein the component exhibits a m/z in a range from 46 to 200.
2. The method according to claim 1 ,
wherein the component exhibits the m/z in a range from 46 to 130.
3. The method according to claim 1 ,
wherein the component exhibits the m/z of 46, 84, 86, or 92.
4. The method according to claim 1 ,
wherein the organic compound is deposited when the partial pressure is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.
5. The method according to claim 4 ,
wherein the deposition is stopped when the partial pressure is higher than 5.0×10 −8 Pa.
6. The method according to claim 1 ,
wherein the semiconductor device is a light-emitting element.
7. A method for fabricating a semiconductor device, the method comprising:
forming a film by co-evaporating a plurality of organic compounds in a film-formation chamber,
wherein a partial pressure of a component in the film-formation chamber is monitored during the evaporation by using a mass spectrometer, and
wherein the component exhibits a m/z in a range from 46 to 200.
8. The method according to claim 7 ,
wherein the component exhibits the m/z in a range from 46 to 130.
9. The method according to claim 7 ,
wherein the component exhibits the m/z of 46, 84, 86, or 92.
10. The method according to claim 7 ,
wherein the plurality of organic compounds are deposited when the partial pressure is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.
11. The method according to claim 10 ,
wherein the deposition is stopped when the partial pressure is higher than 5.0×10 −8 Pa.
12. The method according to claim 7 ,
wherein the plurality of organic compounds includes a first organic compound and a second organic compound, and
wherein the co-evaporation is performed so that the first organic compound is dispersed in the second organic compound in the film.
13. The method according to claim 12 ,
wherein the first organic compound exhibits a thermally activated delayed fluorescence.
14. The method according to claim 12 ,
wherein the plurality of organic compounds further includes a third organic compound which forms an exciplex with the second organic compound, and
wherein the first organic compound is a phosphorescent substance.
15. The method according to claim 7 ,
wherein the semiconductor device is a light-emitting element.