Light-emitting device and electronic apparatus
A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.
1. A light-emitting device,
wherein a first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer between which the light-emission functional layer is interposed, respectively, and
a pixel definition layer with a top surface and a bottom surface opposite the top surface that is formed of an insulating material, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element are formed on a base,
wherein a first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different from each other,
wherein the resonance structure has an optical path adjustment layer,
wherein the pixel definition layer and the optical path adjustment layer are formed of silicon compound,
wherein the pixel definition layer physically contacts both the optical path adjustment layer and the light-emission functional layer, and
wherein a film thickness of the pixel definition layer between the top surface and the bottom surface along a vertical line and between the physical contact with the optical path adjustment layer and the physical contact with the light-emission functional layer is less than a difference between the first interval and the second interval.
2. The light-emitting device according to claim 1 , further comprising:
a sealing layer that coats the first light-emitting element and the second light-emitting element,
wherein a film thickness of the sealing layer is greater than a difference between the first interval and the second interval and is greater than the film thickness of the pixel definition layer.
3. The light-emitting device according to claim 2 ,
wherein the first light-emitting element and the second light-emitting element respectively include
a first electrode,
a second electrode that is positioned on an opposite side of the base when viewed from the first electrode, and functions as a semi-transmissive reflective layer, and
the light-emission functional layer that is positioned between the first electrode and the second electrode, and
wherein the sealing layer is in direct contact with a surface of the second electrode.
4. An electronic apparatus comprising the light-emitting device according to claim 1 .
5. An electronic apparatus comprising the light-emitting device according to claim 2 .
6. An electronic apparatus comprising the light-emitting device according to claim 3 .