METHOD OF DEPOSITING COPPER USING PHYSICAL VAPOR DEPOSITION
The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50.degree. C. or less, with the deposition taking place at a power level of 300 W or less.
1 . A method of forming an electronic structure comprising:
providing a tantalum layer; and
depositing a layer of copper of a substantially uniform thickness of 30 angstroms or less on the tantalum layer.
2 . The method of claim 1 , wherein the layer of copper is deposited by physical vapor deposition with the temperature of the tantalum layer at 50° C. or less.
3 . The method of claim 2 , wherein the layer of copper is deposited by physical vapor deposition with the temperature of the tantalum layer at approximately 30° C.
4 . The method of claim 1 , wherein the base layer is formed on a layer of oxide that is formed on the surface of a wafer.
5 . The method of claim 4 , wherein the wafer, the layer of oxide, and the base layer are transformed to a chamber, after forming the base layer, to avoid contamination and to provide a vacuum.
6 . The method of claim 5 , further comprising a pump-down step to provide the vacuum.
7 . The method of claim 1 , wherein the layer of copper is deposited by physical vapor deposition at a power level of 300 W or less.
8 . The method of claim 7 , wherein the layer of copper is deposited by physical vapor deposition at a power level of approximately 200 W.
9 . The method of claim 1 , further comprising rapid cooling of the layer of oxide and the base layer, wherein rapid cooling is performed for an extended period of time.
10 . The method of claim 1 , wherein a power level of 300 W or less and a cool base layer promote a smooth, continuous, uniform, and thin formation of the layer of copper.
11 . The method of claim 1 , wherein said electronic structure is incorporated in a system.
12 . The method of claim 1 , wherein the system is selected from the group consisting of a vehicle, and a computer.
13 . A method of forming an electronic structure incorporated in a hand-held device, said method comprising:
providing a base layer on a layer of oxide that is formed on the surface of a wafer; and
depositing a layer of copper of a substantially uniform thickness of 30 angstroms or less on the tantalum layer.
14 . The method of claim 13 , wherein the layer of copper is deposited by physical vapor deposition with the temperature of the tantalum layer at 50° C. or less.
15 . The method of claim 13 , wherein the layer of copper is deposited by physical vapor deposition at a power level of 300 W or less.
16 . The method of claim 13 , wherein the wafer with the layer of oxide and the base layer are transformed to a chamber, after forming the base layer, to avoid contamination and to provide a vacuum.
17 . The method of claim 16 , further comprising a pump-down step to provide the vacuum.
18 . The method of claim 13 , further comprising rapid cooling of the layer of oxide and the base layer.
19 . The method of claim 13 , wherein the power level of 300 W or less and a cool base layer promote a smooth, continuous, uniform, and thin formation of the layer of copper.
20 . The method of claim 19 , wherein the rapid cooling is performed after forming of the tantalum layer.