IP Library Granted Patent US 9,257,404
Granted Patent B2
US 9,257,404 · App. 14/315,965 · Granted Feb 9, 2016

Semiconductor device, having through electrodes, a manufacturing method thereof, and an electronic apparatus

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Quick Facts
Patent No.
US 9,257,404
App. No.
14/315,965
Granted
Feb 9, 2016
Kind
B2
Abstract

A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.

Claims (20)

1. A semiconductor device, comprising:

a semiconductor substrate having a through hole between a first surface and a second surface opposite to each other;

an insulation film provided along an inner surface of the through hole;

a through electrode provided along an inner surface of the insulation film, a through electrode tip of the through electrode protruding relative to the second surface of the semiconductor substrate;

a resin provided along an inner surface of the through electrode inside the through electrode;

an electronic element provided on the second surface, a terminal of the electronic element contacting the through electrode; and

an external terminal provided on or above the first surface of the semiconductor substrate, wherein

the through hole is elongated in one direction in a plan view, and

a plurality of through electrodes are formed side by side in the through hole.

2. The semiconductor device according to claim 1 , wherein

the tip of the through electrode takes the shape of a curved surface, the curved surface being convex outwardly.

3. The semiconductor device according to claim 1 , wherein

the through electrode is in a tapered shape, the tapered shape being tapered toward the electrode tip.

4. The semiconductor device according to claim 1 , wherein

an electrode pad electrically connected to the through electrode is formed on the first surface having an active surface of the semiconductor substrate.

5. The semiconductor device according to claim 4 , wherein

the external terminal electrically connected to the electrode pad is formed on a different position from the electrode pad in a plan view.

6. The semiconductor device according to claim 1 , wherein

the through electrode tip is deformed when the electronic element is mounted on the semiconductor device.

7. An electronic apparatus, comprising a circuit substrate on which the semiconductor device according to claim 1 is mounted.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2017
From: SEIKO EPSON CORPORATION
To: ADVANCED INTERCONNECT SYSTEMS LIMITED
Reel/Frame 044938/0869 →