IP Library Granted Patent US 9,679,940
Granted Patent B2
US 9,679,940 · App. 14/323,533 · Granted Jun 13, 2017

Fractal-edge thin film and method of manufacture

Inventor: Oray Orkun Cellek (Mountain View, CA)
Assignee: OmniVision Technologies, Inc.
H01L27/14685H01L27/1462H01L27/14687
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Quick Facts
Patent No.
US 9,679,940
App. No.
14/323,533
Granted
Jun 13, 2017
Kind
B2
Abstract

A fractal-edge thin film includes a material layer having a perimeter with a fractal dimension exceeding one, the material layer having greater peel resistance as compared to a thin-film material layer with fractal dimension equaling one. A method of manufacturing a fractal-edge thin film includes determining an area shape to be covered by the fractal-edge thin film. The method also includes generating a thin-film perimeter based upon the area shape, the thin-film perimeter having a fractal dimension exceeding one. The method also includes determining a photomask perimeter such that a photomask with the photomask perimeter, when used in a photolithography process, yields a fractal-edge thin film with the thin-film perimeter. The method may also include photolithographically etching a thin-film, the thin film having a photoresist layer disposed thereon, the photoresist layer having been exposed through the photomask, wherein the etching results in the fractal-edge thin film.

Claims (9)

1. A multi-layer structure comprising:

an CMOS image sensor including a substrate having a plurality of light-sensing elements configured to detect light incident on a surface of the substrate; and

on the surface, a dielectric material layer having a perimeter with a fractal dimension exceeding one.

2. The multi-layer structure of claim 1 , the fractal dimension being a box-counting dimension.

3. The multi-layer structure of claim 1 , the perimeter of the material layer corresponding to a curve selected from the group consisting of a Koch curve, a quadratic Koch curve, a Julia set, a Rauzy fractal, a Gosper curve, a Fibonacci word fractal, and a boundary of a dragon curve.

4. The multilayer structure of claim 1 , the surface including a first region and a bare second region surrounding and immediately adjacent to the first region, the dielectric material layer being on the surface and defining the first region.

5. A multi-layer structure comprising:

an CMOS image sensor including a substrate having a plurality of light-sensing elements configured to detect light incident on a surface of the substrate; and

on the surface, a material layer having an area shape surrounded by a perimeter having a fractal dimension exceeding one.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 4, 2014
From: CELLEK, ORAY ORKUN
To: OMNIVISION TECHNOLOGIES, INC.
Reel/Frame 033278/0500 →
Continuity (1)
Related Publication 20160005774A1 · Jan 7, 2016