Fabrication of ionic liquid electrodeposited Cu—Sn—Zn—S—Se thin films and method of making
A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.
1. A method for producing a semiconductor thin-film comprising:
(a) electrodepositing, onto a substrate, from an aqueous bath into which a first metallic salt has been dissolved, a first layer comprising a first metal;
(b) electrodepositing, onto the first layer, a second layer comprising a second metal;
(c) electrodepositing, onto the second layer, from a non-aqueous ionic liquid into which a second metallic salt has been dissolved, a third layer comprising a third metal; and
(d) annealing the first, second and third layers in chalcogen.
2. The method of claim 1 , wherein the first metallic salt comprises at least one of stannous chloride (SnCl 2 ) or stannic chloride (SnCl 4 ).
3. The method of claim 1 , wherein the chalcogen comprises at least one of selenium, sulfur, telluride, or polonium.
4. The method of claim 1 , wherein the ionic liquid comprises at least one of sodium sulfate, sodium fluoride, potassium fluoride, potassium bifluoride, sodium bifluoride, sodium chloride, zinc chloride, or potassium chloride.
5. The method of claim 1 , wherein the ionic liquid comprises choline chloride (C 5 H 14 ClNO).
6. The method of claim 5 , wherein the ionic liquid further comprises ethylene glycol.
7. The method of claim 1 , wherein the second layer is electrodeposited from a sulfonate-based solution into which a third metallic salt has been dissolved.
8. The method of claim 7 , wherein the sulfonate-based solution comprises a surfactant.
9. The method of claim 7 , wherein the sulfonate comprises at least one of a mesylate, a triflate, a tosylate, or a besylate.
10. The method of claim 1 , wherein the first metal comprises copper.
11. The method of claim 1 , wherein the second metal comprises tin.
12. The method of claim 1 , wherein the third metal comprises zinc.
13. The method of claim 1 , wherein at least one of electrodepositing the first layer, electrodepositing the second layer, and electrodepositing the third layer comprises using a plating current density in the range of approximately 1 to 8 mA/cm 2 .
14. The method of claim 1 , wherein the substrate comprises at least one of glass, chromium, molybdenum, silicon, silicon dioxide, aluminum oxide, sapphire, germanium, an alloy of silicon and germanium, or an alloy of indium phosphide (InP).
15. The method of claim 1 , wherein the substrate comprises glass coated with a molybdenum film.
16. The method of claim 1 , wherein the ionic liquid has a pH in the range of approximately 1-5.
17. The method of claim 1 , wherein the second metallic salt comprises at least one of zinc sulfate or zinc chloride.