IP Library Granted Patent US 9,656,243
Granted Patent B2
US 9,656,243 · App. 14/328,136 · Granted May 23, 2017

Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

Inventors: Donghai Wang (State College, PA); Fang Dai (State College, PA); Ran Yi (State College, PA); Jianto Zai (State College, PA)
Assignee: The Penn State Research Foundation
B01J21/06B01J35/004B01J35/1019B01J35/1023B01J35/1042B01J35/1047B01J35/1061C01B33/033H01M4/386H01M4/622H01M8/0606H01M4/623H01M10/0525Y02E60/324Y02P70/56
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,656,243
App. No.
14/328,136
Granted
May 23, 2017
Kind
B2
Abstract

We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl 4 ) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

Claims (23)

1. A process for production of porous crystalline silicon, comprising:

reducing a silicon-halogenide precursor with at least one of an alkaline metal and an alkaline metal alloy to produce a silicon-salt matrix;

annealing the silicon-salt matrix, thereby forming a plurality of salt crystals in a porous silicon structure; and

washing the porous silicon structure with water, thereby providing a porous crystalline silicon.

2. The process of claim 1 , wherein the silicon-halogenide precursor is selected from the group consisting of SiCl 4 , SiI 4 , SiBr 4 , and SiF 4 .

3. The process of claim 2 , wherein the silicon-halogenide precursor is SiCl 4 .

4. The process of claim 1 , wherein the alkaline alloy is selected from the group consisting of sodium-potassium alloy (NaK), sodium metal, and sodium naphthanide.

5. The process of claim 1 , wherein the alkaline alloy is NaK and other alkaline metal or alloy, and the silicon-halogenide precursor is SiCl 4 .

6. The process of claim 1 , wherein the process does not include contacting any member of the group consisting of the silicon-halogenide precursor, the silicon-salt matrix, and the porous silicon structure with hydrofluoric acid.

7. The process of claim 1 , wherein the porous silicon structure includes a plurality of pores ranging in size from 1 nm to 200 nm, wherein the pore size is governed by the size of at least one external template.

8. The process of claim 1 , wherein the porous silicon structure includes a plurality of pores distributed in an ordered distribution.

9. The process of claim 1 , wherein the porous silicon structure has a total pore volume between 0.86 and 2.00 cm 3 g −1 .

10. The process of claim 1 , wherein the porous silicon structure has a surface area between 220 and 700 m 2 g −1 .

11. The process of claim 1 , wherein the silicon-halogenide precursor is mixed with an external template, wherein the porous silicon structure has an average pore size greater than 20 nm.

12. The process of claim 1 , wherein the reducing step is conducted in a toluene solution.

13. The process of claim 9 , wherein the porous silicon structure has a total pore volume between 0.86 and 1.44 cm 3 g −1 .

14. The process of claim 10 , wherein the porous silicon structure has a surface area between 220 and 580 m 2 g −1 .

15. The process of claim 14 , wherein the porous silicon structure has a surface area between 400 and 525 m 2 g −1 .

16. The process of claim 1 , wherein the porous silicon structure has a mean average pore diameter between 8 and 12 nm.

17. The process of claim 1 , wherein the porous silicon structure has a mean average pore diameter less than 8 nm.

18. The process of claim 1 further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 600° C. to 950° C.

19. The process of claim 18 further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 650° C. to 900° C.

20. The process of claim 19 , further comprising, prior to washing the porous silicon structure with water, calcining the porous silicon structure at a temperature from 700° C. to 800° C.

Assignments (3)
CONFIRMATORY LICENSE Recorded Aug 17, 2020
From: PENNSYLVANIA STATE UNIVERSITY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 053516/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2015
From: WANG, DONGHAI
To: THE PENN STATE RESEARCH FOUNDATION
Reel/Frame 037382/0417 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2015
From: YI, RAN; DAI, FANG; ZAI, JIANTAO
To: THE PENN STATE RESEARCH FOUNDATION
Reel/Frame 037058/0813 →
Continuity (2)
Provisional Application 61844634 · Jul 10, 2013
Related Publication 20150017569A1 · Jan 15, 2015