IP Library Granted Patent US 9,599,846
Granted Patent B2
US 9,599,846 · App. 14/328,872 · Granted Mar 21, 2017

Method of switching guest-host dual frequency liquid crystal by using back flow

Inventors: Sun-kwon Kim (Suwon-si, KR); Do-kyoon Kim (Seongnam-si, KR); Kee-chang Lee (Yongin-si, KR); Glenn Mangelinckx (Ghent, BE); Jeroen Beeckman (Ghent, BE)
Assignee: Samsung Electronics Co., Ltd.
G02F1/13306G02F1/1392G02F1/13725G02F1/13475
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Quick Facts
Patent No.
US 9,599,846
App. No.
14/328,872
Granted
Mar 21, 2017
Kind
B2
Abstract

Provided are methods of switching guest-host dual frequency liquid crystals by using a back flow. In the case of a shutter having a dual frequency liquid crystal layer between two transparent substrates, such a method includes: applying a first voltage having a first frequency to the dual frequency liquid crystal layer; and applying a second voltage having a second frequency to the dual frequency liquid crystal, the second frequency being higher than the first frequency, wherein the second voltage is higher than a threshold voltage that generates a back flow around liquid crystals of the dual frequency liquid crystal layer, and the first voltage is lower than the threshold voltage.

Claims (18)

1. A method of switching dual frequency liquid crystals of a shutter having a dual frequency liquid crystal layer between two transparent substrates, the method comprising:

applying a first voltage having a first frequency to the dual frequency liquid crystal layer such that the dual frequency liquid crystals are switched to a homeotropic state; and

applying a second voltage having a second frequency to the dual frequency liquid crystal, the second frequency being higher than the first frequency, such that the dual frequency liquid crystals are switched to a 360° twisted state due to a back flow generated around the dual frequency liquid crystals,

wherein the second voltage is higher than a threshold voltage that generates a back flow around liquid crystals of the dual frequency liquid crystal layer, and

the first voltage is lower than the threshold voltage.

2. The method of claim 1 , wherein the dual frequency liquid crystal layer comprises an optical absorption dye.

3. The method of claim 1 , wherein the first voltage has a form of a square wave.

4. The method of claim 1 , wherein the second voltage has a form of a sine wave.

5. A method of switching dual frequency liquid crystals of a shutter having a dual frequency liquid crystal layer between two transparent substrates, the method comprising:

changing a state of the dual frequency liquid crystal layer so that an optical transmission of the dual frequency liquid crystal layer is increased; and

twisting the dual frequency liquid crystal layer 360° by generating a back flow around the liquid crystals of the dual frequency liquid crystal layer.

6. The method of claim 5 , wherein the changing of the state of the dual frequency liquid crystal layer comprises changing liquid crystals of the dual frequency liquid crystal layer from a horizontal state to a homeotropic state.

7. The method of claim 5 , wherein the back flow is generated by applying a voltage to the dual frequency liquid crystal layer that is greater than a threshold voltage that generates a back flow.

8. A method of switching dual frequency liquid crystals of a shutter having a dual frequency liquid crystal layer between two transparent substrates, the method comprising:

applying a first voltage having a first frequency to the dual frequency liquid crystal layer such that the dual frequency liquid crystals are switched to a homeotropic state; and

applying a second voltage having a second frequency to the dual frequency liquid crystal such that the dual frequency liquid crystals are switched to a 360° twisted state due to a back flow generated around the dual frequency liquid crystals,

wherein the second voltage is higher than a threshold voltage that generates a back flow around liquid crystals of the dual frequency liquid crystal layer and the first voltage is lower than the threshold voltage.

9. The method of claim 8 , wherein the second frequency is higher than the first frequency.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2014
From: KIM, SUN-KWON; KIM, DO-KYOON; LEE, KEE-CHANG; MANGELINCKX, GLENN; BEECKMAN, JEROEN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 033369/0479 →
Priority Claims (1)
KR 10-2013-0082297 · Jul 12, 2013 · national
Continuity (1)
Related Publication 20150015818A1 · Jan 15, 2015