Granted Patent B2

US 9,691,746 · App. 14/330,805 · Granted Jun 27, 2017

Abstract

Claims (52)

1. A method for packaging a semiconductor die assembly, the method comprising:

providing a first die and a plurality of second dies arranged in a stack and attached to the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies;

positioning at least a first portion of a thermal transfer structure at the peripheral region of the first die, wherein the first portion has a first sidewall extending from the peripheral region to a height at an intermediate elevation of the stack of second dies, and wherein the thermal transfer structure comprises a thermally conductive material;

flowing an underfill material between the second dies after positioning the thermal transfer structure on the peripheral region of the first die, wherein the underfill material has a fillet extending laterally from the stack of second dies, wherein the lateral extension of the underfill material is limited by the first sidewall of the first portion of the thermal transfer structure, and wherein the fillet has an upper surface that is curved; and

attaching a second portion of the thermal transfer structure to the first portion of the thermal transfer structure after flowing the underfill material, wherein the second portion includes a cover having a top and a second sidewall pendent from the top, and wherein the second sidewall is configured to attach to the first sidewall at the intermediate elevation.

2. The method of claim 1 wherein:

the first portion has a foundation configured to extend at least around a portion of the first die and a shoulder configured to be positioned over the peripheral region of the first die; and

positioning at least a portion of the thermal transfer structure on the peripheral region of the first die comprises attaching the foundation to a package support substrate and the shoulder to the peripheral region of the first die with a thermal interface material between the shoulder and the peripheral region of the first die.

3. The method of claim 1 wherein:

the first portion has (a) a foundation configured to extend at least around a portion of the first die and be attached to a package support substrate and (b) a shoulder configured to be attached to an upper surface of the peripheral region; and

positioning at least a portion of the thermal transfer structure on the peripheral region of the first die comprises attaching the foundation to a package support substrate and the shoulder to the peripheral region of the first die with a thermal interface material between the shoulder and the peripheral region of the first die, wherein the first and second portions of the thermal transfer structure form a casing having a cavity in which the first die and the stack of second dies are positioned.

4. The method of claim 3 wherein the first portion of the thermal transfer structure comprises a dam member.

5. The method of claim 4 wherein the second sidewall is attached to the dam member.

6. The method of claim 4 wherein the dam member comprises a ring that surrounds the first die.

7. The method of claim 1 wherein:

the stack of second dies projects from the first die by a first height;

the first sidewall of the first portion of the thermal transfer structure projects from the first die by a second height that is less than the first height; and

the second sidewall of the casing projects form the top by a third height that is less than the first height.

8. The method of claim 1 wherein the thermal transfer structure comprises a metal casing having a cavity, wherein the first portion of the thermal transfer structure comprises a lower portion of the metal casing, and wherein positioning at least a portion of the thermal transfer structure at the peripheral region of the first die comprises attaching the lower portion of the metal casing to the peripheral region of the first die with a thermal interface material such that the stack of second dies is in the cavity of the metal casing.

9. The method of claim 8 wherein:

the lower portion of the metal casing comprises a metal ring;

the second portion of the thermal transfer structure comprises a metal cover;

positioning at least a portion of the thermal transfer structure at the peripheral region of the first die comprises attaching the ring to the peripheral region; and

attaching the second portion of the thermal transfer structure to the first portion comprises attaching the metal cover to the ring after flowing the underfill material such that the stack of second dies is encased within the metal ring and the metal cover.

10. The method of 1 wherein the fillet partially covers a sidewall of the thermal transfer structure facing the stack of second dies.

11. A method for packaging a semiconductor die assembly, the method comprising:

providing a first die and a plurality of second dies arranged in a stack over the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies;

coupling a metal casing of a thermal transfer structure to the peripheral region of the first die, wherein the metal casing has a first sidewall that extends from the peripheral region to a height at an intermediate elevation of the stack of second dies;

flowing an underfill material between the second dies after coupling the metal casing of the thermal transfer structure to the peripheral region of the first die, wherein—

the metal casing limits lateral flow of the underfill material,

the underfill material has a fillet extending laterally from the stack of second dies, and

the fillet has a concave shape; and

attaching a cover of the thermal transfer structure to the metal casing of the thermal transfer structure after flowing the underfill material, wherein the cover has a top and a second sidewall that is pendent from the top, and wherein the second sidewall of the cover attaches to the first sidewall of the casing at the intermediate elevation.

12. The method of claim 11 wherein flowing the underfill material comprises instilling the underfill material between at least the first sidewall of the casing and the stack of second dies.

13. The method of claim 11 wherein:

the metal casing further comprises a foundation configured to extend at least around a portion of the first die and a shoulder configured to be positioned over the peripheral region of the first die;

coupling the thermal transfer structure to the peripheral region of the first die comprises attaching the foundation of the metal casing to a package support substrate and attaching the shoulder of the metal casing to the peripheral region of the first die, wherein a thermal interface material is between the shoulder of the metal casing and the peripheral region of the first die; and

flowing the underfill material comprises depositing the underfill material such that it flows between the metal casing and the stack of second dies.

14. The method of 11 wherein the fillet partially covers a surface of the thermal transfer structure facing the stack of second dies.

15. A method for packaging a semiconductor die assembly, the method comprising:

providing a first die and a plurality of second dies arranged in a stack and attached to the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies;

positioning a dam member on the peripheral region of the first die, wherein the dam member comprises a thermally conductive material, and wherein the dam member extends from the peripheral region to a height that is below an uppermost die of the stack of second dies; and

flowing an underfill material between the second dies after positioning the dam member on the peripheral region of the first die, wherein—

the dam member is configured to contain a fillet portion of the underfill material,

the fillet portion includes a curved surface, and

the fillet portion partially covers a sidewall of the dam member facing the stack of second dies; and

attaching a sidewall of a cover to the dam member after flowing the underfill material, wherein the sidewall is pendant from a top of the cover and attached to the dam member at the height below the uppermost die of the stack of second dies.

16. A method for packaging a semiconductor die assembly, the method comprising:

providing a first die and a plurality of second dies arranged in a stack and attached to the first die, wherein the first die has a peripheral region extending laterally outward from the stack of second dies, and wherein the stack of second dies projects from the first die by a first height;

positioning a first portion of a casing on the peripheral region of the first die, wherein the casing member comprises a thermally conductive material and partially encloses the stack of second dies, wherein the first portion of the casing includes a first sidewall adjacent the stack of second dies and projecting from the first die by a second height that is less than the first height;

flowing an underfill material between the second dies after positioning the casing on the peripheral region of the first die, wherein the underfill material has a fillet extending laterally from the stack of second dies, and wherein the fillet has a concave shape and partially covers an inner sidewall of the casing facing the stack of second dies; and

attaching a second portion of the casing to the first portion after flowing the underfill material, wherein the second portion of the casing has a top and a second sidewall adjacent the stack of second dies and projecting from the top by a third height that is less than the first height.

Assignments (8)