Semiconductor structure having dielectric layer and conductive strip

1. A semiconductor structure, comprising:

conductive strips;

conductive layers arranged in a crisscross manner with respect to the conductive strips;

a first dielectric layer between the conductive strips and the conductive layers, wherein the first dielectric layer covers the conductive strips and surrounds the conductive layers; and

a second dielectric layer different from the first dielectric layer, wherein the second dielectric layer and the first dielectric layer are adjoined with the conductive strips in different positions on a same sidewall of each respective conductive strip, wherein the second dielectric layer is between adjacent two of the conductive strips and between adjacent two of the conductive layers.

2. The semiconductor structure according to claim 1 , comprising a plurality of the first dielectric layers separated from each other by the second dielectric layer.

3. The semiconductor structure according to claim 1 , wherein the conductive strips have a first conductive portion and a second conductive portion adjoined with the first conductive portion, the first dielectric layer is adjoined with the first conductive portion, the second dielectric layer is adjoined with the second conductive portion, a width of the first conductive portion is different from a width of the second conductive portion.

4. The semiconductor structure according to claim 1 , wherein the first dielectric layer and the second dielectric layer are adjoined with different portions of the conductive strips in an extending direction of the conductive strips.

5. The semiconductor structure according to claim 1 , wherein the first dielectric layer is a multi-layer dielectric structure, the second dielectric layer is a single-layer dielectric structure.

6. The semiconductor structure according to claim 1 , wherein the first dielectric layer is an oxide-nitride-oxide (ONO) or an oxide-nitride-oxide-nitride-oxide (ONONO), the second dielectric layer is an oxide.

7. The semiconductor structure according to claim 1 , wherein the semiconductor structure is a memory device, the conductive strips are functioned as bit lines, the conductive layers are functioned as word lines.

8. The semiconductor structure according to claim 7 , comprising a plurality of the conductive layers functioned as a plurality of the word lines having a first gap distance and a second gap distance different from the first gap distance between the word lines.

9. A semiconductor structure, comprising:

a conductive layer;

a first dielectric layer surrounding the conductive layer;

a conductive strip crisscrossing the conductive layer, the conductive strip separated from the conductive layer by the first dielectric layer, wherein the conductive strip comprises a first conductive portion, a second conductive portion, and a curved surface between the first conductive portion and the second conductive portion, the first dielectric layer covers the conductive strip; and

second dielectric layers different from the first dielectric layer, wherein the second conductive portion of the conductive strip is adjoined between the second dielectric layers, wherein the first dielectric layer is a multi-layer dielectric structure, the second dielectric layers are a single-layer dielectric structure.

10. The semiconductor structure according to claim 9 , wherein the first dielectric layer is between the first conductive portion of the conductive strip and the conductive layer.

11. The semiconductor structure according to claim 9 , wherein the first conductive portion and the second conductive portion are arranged along an extending direction of the conductive strip alternately.

12. The semiconductor structure according to claim 9 , comprising a plurality of the first dielectric layers, wherein the first conductive portion of the conductive strip is adjoined between the first dielectric layers.

13. The semiconductor structure according to claim 9 , wherein the first dielectric layer is an oxide-nitride-oxide (ONO) or an oxide-nitride-oxide-nitride-oxide (ONONO), the second dielectric layers are an oxide.

14. The semiconductor structure according to claim 9 , wherein the semiconductor structure is a memory device, the conductive strip is functioned as a bit line, the conductive layer is functioned as a word line.

15. The semiconductor structure according to claim 14 , comprising a plurality of the conductive layers functioned as a plurality of the word lines having a first gap distance and a second gap distance different from the first gap distance between the word lines.

16. A semiconductor structure, comprising:

a conductive layer comprising a first portion in a first through hole and a second portion above the first portion, wherein the first portion has a first sidewall, a second sidewall opposing to the first sidewall, and a third sidewall between the first sidewall and the second sidewall;

a conductive strip extending in a direction perpendicular to an extending direction of the second portion of the conductive layer; and

a first dielectric layer separating the conductive strip and the conductive layer, wherein the conductive layer crisscrosses the conductive strip, wherein the first dielectric layer covers the conductive strip and surrounds the conductive layer, a thickness of a portion of the first dielectric layer on the first sidewall and the second sidewall of the conductive layer is thicker than a thickness of a portion of the first dielectric layer on the third sidewall of the conductive layer.

17. The semiconductor structure according to claim 16 , further comprising a second dielectric layer different from the first dielectric layer and adjoined with the first dielectric layer, the first sidewall and the second sidewall of the conductive layer face the first dielectric layer, the third sidewall of the conductive layer faces the second dielectric layer.