Organic light-emitting apparatus and method of manufacturing the same
An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.
1. A method of manufacturing an organic light-emitting apparatus, comprising:
forming an organic light-emitting device on a substrate, the organic light-emitting device comprising:
a first electrode;
a second electrode; and
an intermediate layer disposed between the first electrode and the second electrode; and
forming an encapsulation layer to cover the organic light-emitting device,
wherein:
the forming of the encapsulation layer comprises:
forming a first inorganic layer to cover the organic light-emitting device; and
forming a first fracture control layer on the first inorganic layer to seal a first fracture point formed at a surface of the first inorganic layer; and
at least a portion of the first fracture control layer overlaps the light-emitting device.
2. The method of claim 1 , wherein the forming of the encapsulation layer further comprises forming a first organic layer on the first fracture control layer.
3. The method of claim 2 , wherein the forming of the encapsulation layer further comprises:
forming a second inorganic layer on the first organic layer; and
forming a second fracture control layer on the second inorganic layer to seal a second fracture point formed at a surface of the second inorganic layer.
4. The method of claim 1 , wherein the first fracture control layer comprises an oxide, a nitride, an oxynitride, a metal, or a cermet.
5. The method of claim 1 , wherein a density of the first fracture control layer is in a range of about 2.6 g/cm 3 to about 2.9 g/cm 3 .
6. The method of claim 1 , wherein a thickness of the first fracture control layer is in a range of about 0.3 nm to about 5 nm.
7. The method of claim 1 , wherein the forming of the first fracture control layer comprises using an atomic layer deposition (ALD) process.
8. The method of claim 7 , wherein the ALD process comprises:
an adsorption operation;
a first exhaustion operation;
a reaction operation; and
a second exhaustion operation.
9. The method of claim 8 , wherein a source material is adsorbed at the first fracture point during the adsorption operation.
10. The method of claim 8 , wherein a carbon content of the first fracture control layer is controlled during the reaction operation.