Semiconductor device having buried gate and manufacturing method thereof
A dummy active region is formed in a region in which a gate contact for supplying operation power to the buried gate is formed, and a PN junction diode connected to the gate contact in a reverse bias direction is formed in the dummy active region. Current leakage, in which current flows out toward a substrate, is prevented even when misalignment of the gate contact occurs.
1. A semiconductor device comprising:
a device isolation layer defining an active region and a dummy active region;
a gate buried in the active region, the dummy active region, and the device isolation layer; and
a gate contact coupled to a portion of the gate buried in the dummy active region,
wherein the dummy active region includes a P-type impurity region and an N-type impurity region disposed on the P-type impurity region, and
wherein the N-type impurity region is disposed at both sides of the gate and under the gate.
2. The semiconductor device of claim 1 , wherein the gate has a stacked structure of a first gate electrode and a second gate electrode, and portions of the second gate electrode are not disposed in the dummy active region.
3. The semiconductor device of claim 2 , wherein the first gate electrode includes a metal, and the second gate electrode includes polysilicon.
4. The semiconductor device of claim 1 , wherein the dummy active region is an island type active region in which one gate is buried.
5. The semiconductor device of claim 1 , wherein the dummy active region is a line type active region in which a plurality of gates is buried.
6. The semiconductor device of claim 5 , wherein the dummy active region is parallel to a bit line.
7. The semiconductor device of claim 1 , wherein a portion of the gate in the device isolation layer has a greater depth than a portion of the gate in the active region, and surfaces of the gate extend over sidewalls of the active region at a transition between the active region and the device isolation layer.
8. A semiconductor device comprising:
a buried gate disposed in a trench in an active region and a dummy active region;
a gate contact coupled to a portion of the buried gate in the dummy active region; and
a PN diode in the dummy active region,
wherein the PN diode includes a P-type impurity region and an N-type impurity region disposed on the P-type impurity region, and
wherein the N-type impurity region is disposed at both sides of the buried gate and under the buried gate.
9. The semiconductor device of claim 8 , wherein the buried gate includes a polysilicon upper gate electrode and a metal lower gate electrode.
10. The semiconductor device of claim 8 , wherein a depletion zone of the PN diode is disposed at a depth that is the same or greater than a depth of a bottom surface of a portion of the buried gate in the dummy active region.
11. The semiconductor device of claim 8 , wherein a depth of N-type impurities in the dummy active region is greater than a depth of N-type impurities in the active region.
12. The semiconductor device of claim 8 , wherein the active region is disposed in a cell region of the semiconductor device, and the dummy region is disposed in a peripheral region of the semiconductor device.