Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD
A semiconductor device has a substrate and a gate formed over the substrate. An LDD region is formed in the substrate adjacent to the gate. A superjunction is formed in the LDD region while a portion of the LDD region remains between the superjunction and gate. A mask is formed over the substrate. A first region is doped with a first type of dopant using the mask. A stripe is doped with a second type of dopant using a portion of the mask. A drain contact region is formed in the substrate. The first region extends to the drain contact region. The first region and stripe are formed using chain implants. A source field plate and drain field plate are formed over the substrate. A trench is formed in the substrate. A source contact region is formed in the trench.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a gate over the substrate;
forming a lightly doped drain (LDD) region in the substrate adjacent to the gate;
forming a first mask over the substrate including a portion of the first mask over the LDD region adjacent to the gate; and
forming a superjunction in the LDD region using the first mask.
2. The method of claim 1 , wherein forming the superjunction includes:
forming a first region doped with a first type of dopant using the first mask; and
forming a stripe doped with a second type of dopant using a portion of the first mask.
3. The method of claim 2 , further including:
forming a drain contact region in the substrate; and
forming the first region extending to the drain contact region.
4. The method of claim 2 , further including forming the first region and stripe using chain implants.
5. The method of claim 1 , further including:
forming a trench in the substrate; and
forming a source contact region in the trench.
6. The method of claim 1 , further including:
forming a source field plate over the substrate; and
forming a drain field plate over the substrate.
7. The method of claim 2 , further including forming the stripe using the portion of the first mask and a second mask.
8. A method of making a semiconductor device, comprising:
providing a substrate;
forming a gate over the substrate;
forming a lightly doped drain (LDD) region in the substrate adjacent to the gate;
forming a mask over the substrate; and
forming a superjunction in the LDD region using the mask.
9. The method of claim 8 , further including:
forming a drain contact region in the substrate; and
forming the superjunction while a first portion of the LDD region remains between the superjunction and gate and a second portion of the LDD region remains between the superjunction and drain contact region.
10. The method of claim 8 , wherein forming the superjunction includes:
forming a first region doped with a first type of dopant; and
forming a stripe doped with a second type of dopant and self-aligned to the first region.
11. The method of claim 10 , further including:
forming a drain contact region in the substrate; and
forming the first region extending to the drain contact region.
12. The method of claim 8 , further including forming the superjunction using chain implants.
13. The method of claim 8 , further including:
forming a trench in the substrate; and
forming a source contact region in the trench.
14. The method of claim 8 , further including:
forming a source field plate over the substrate; and
forming a drain field plate over the substrate.
15. A method of making a semiconductor device, comprising:
providing a substrate;
forming a lightly doped drain (LDD) region in the substrate;
forming a first mask over the substrate;
forming a first stripe doped with a first type of dopant in the LDD region using the first mask; and
forming a second stripe doped with a second type of dopant in the LDD region using the first mask, wherein the first stripe and second stripe form a superjunction.
16. The method of claim 15 , further including:
forming a drain contact region in the substrate; and
forming a portion of the superjunction extending to the drain contact region.
17. The method of claim 15 , further including forming the first stripe and second stripe using chain implants.
18. The method of claim 15 , further including:
forming a trench in the substrate; and
forming a source contact region in the trench.
19. The method of claim 15 , further including:
forming a source field plate over the substrate; and
forming a drain field plate over the substrate.
20. The method of claim 15 , further including forming the second stripe using the first mask and a second mask.
21. A method of making a semiconductor device, comprising:
providing a substrate;
forming a lightly doped drain (LDD) region in the substrate; and
forming a superjunction in the LDD region while a portion of the LDD region remains extending from a surface of the substrate at a first end of the superjunction to the surface of the substrate at a second end of the superjunction.
22. The method of claim 21 , wherein forming the superjunction includes:
forming a mask over the substrate;
forming a first region doped with a first type of dopant using the mask; and
forming a stripe doped with a second type of dopant using a portion of the mask.
23. The method of claim 21 , further including:
forming a drain contact region in the substrate; and
forming a portion of the superjunction extending to the drain contact region.
24. The method of claim 21 , further including forming the superjunction using chain implants.
25. The method of claim 21 , further including:
forming a trench in the substrate; and
forming a source contact region in the trench.