Semiconductor device and manufacturing method thereof
When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.
1. A semiconductor device comprising:
a substrate;
a first wiring layer;
a first insulating film over the substrate;
an oxide semiconductor layer over the first insulating film;
a second wiring layer over and in contact with the oxide semiconductor layer; and
a second insulating film over and in contact with the oxide semiconductor layer and the second wiring layer,
wherein the first wiring layer and the oxide semiconductor layer overlap with each other,
wherein the second wiring layer comprises a first layer, a second layer over the first layer and a third layer over the second layer,
wherein an end portion of the first layer, an end portion of the second layer and an end portion of the third layer are not aligned with each other, and
wherein the end portion of the second layer is over the first layer, and the end portion of the third layer is over the second layer.
2. The semiconductor device according to claim 1 , wherein a material of the oxide semiconductor layer is IGZO.
3. The semiconductor device according to claim 1 ,
wherein the first layer and the third layer comprise titanium, and
wherein the second layer comprises aluminum.
4. The semiconductor device according to claim 1 ,
wherein the first wiring layer and the oxide semiconductor layer overlap with each other with the first insulating film interposed therebetween.
5. The semiconductor device according to claim 1 ,
wherein the first wiring layer and the oxide semiconductor layer overlap with each other with the second insulating film interposed therebetween.
6. The semiconductor device according to claim 1 ,
wherein at least one of the first insulating film and the second insulating film comprises an oxide insulating film.
7. The semiconductor device according to claim 1 ,
wherein an off-state current of the semiconductor device is less than 10 zA per 1 μm of a channel width of the semiconductor device.
8. The semiconductor device according to claim 1 ,
wherein the second layer has higher conductivity than each of the first layer and the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer.
9. An electronic device comprising the semiconductor device according to claim 1 ,
wherein the electronic device is one selected from the group consisting of a mobile phone, a portable information terminal, a digital camera, a digital video camera, electronic paper and a television device.
10. A semiconductor device comprising:
a substrate;
a first wiring layer over the substrate;
a first insulating film over the first wiring layer;
an oxide semiconductor layer over the first insulating film;
a second wiring layer over and in contact with the oxide semiconductor layer;
a second insulating film over and in contact with the oxide semiconductor layer and the second wiring layer; and
a third wiring layer over the second insulating film,
wherein the third wiring layer overlaps with the first wiring layer with the oxide semiconductor layer interposed therebetween,
wherein the second wiring layer comprises a first layer, a second layer over the first layer and a third layer over the second layer,
wherein an end portion of the first layer, an end portion of the second layer and an end portion of the third layer are not aligned with each other, and
wherein the end portion of the second layer is over the first layer, and the end portion of the third layer is over the second layer.
11. The semiconductor device according to claim 10 , wherein a material of the oxide semiconductor layer is IGZO.
12. The semiconductor device according to claim 10 ,
wherein the first layer and the third layer comprise titanium, and
wherein the second layer comprises aluminum.
13. The semiconductor device according to claim 10 ,
wherein at least one of the first insulating film and the second insulating film comprises an oxide insulating film.
14. The semiconductor device according to claim 10 ,
wherein an off-state current of the semiconductor device is less than 10 zA per 1 μm of a channel width of the semiconductor device.
15. The semiconductor device according to claim 10 ,
wherein the second layer has higher conductivity than the first layer and the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer.
16. The semiconductor device according to claim 10 ,
wherein the third wiring layer is electrically connected to the first wiring layer.
17. The semiconductor device according to claim 10 ,
wherein the third wiring layer is in an electrically floating state.
18. An electronic device comprising the semiconductor device according to claim 10 ,
wherein the electronic device is one selected from the group consisting of a mobile phone, a portable information terminal, a digital camera, a digital video camera, electronic paper and a television device.