Photoresist and method

1. A photoresist comprising:

a polymer having a hydrocarbon backbone, a high etch resistance structure attached to the hydrocarbon backbone with a single chain of carbon-carbon bonds between a carbon atom within the hydrocarbon backbone and a cyclic portion of the high etch resistance structure, and a group which will decompose bonded to the high etch resistance structure, wherein the high etch resistance structure has one of the following structures:

 wherein R 1 is a methyl group, and ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, and isopentyl group, and R 3 is a C 1 to C 3 alkylene chain, and wherein R 2 has one of the following structures:

 wherein R 4 and R 5 are a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, an isopropylene group, or an isobutylene group and wherein R 6 is the group which will decompose.

2. The photoresist of claim 1 , wherein R 2 has the following structure:

wherein R 6 is the group which will decompose.

3. The photoresist of claim 1 , wherein the polymer further comprises a repeating unit derived from a non-leaving monomer with a cross-linking site.

4. The photoresist of claim 3 , wherein the cross-linking site has the following structure:

wherein R 14 is H, OH, OCH 3 , OC 2 H 5 , OC 3 H 7 , OC 4 H 9 , epoxy, CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , CH 2 CH 2 OC 4 H 9 and wherein R 15 is a C 1 to C 5 alkylene chain.

5. The photoresist of claim 4 , wherein the group which will decompose has the following structure:

wherein R 18 is a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, or an isopentyl group, and R 19 is an epoxy group, an alcohol group, an amine group, a carboxylic acid group.

6. The photoresist of claim 3 , further comprising a cross-linking agent.

7. The photoresist of claim 6 , wherein the cross-linking agent has the following structure:

wherein R 25 is hydrogen, epoxy, CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , CH 2 CH 2 OC 4 H 9 .

8. The photoresist of claim 1 , wherein the group which will decompose has the following structure:

wherein R 10 is a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, or an isopentyl group and R 11 is CH 2 , C 2 H 4 , or C 3 H 6 .

9. The photoresist of claim 1 , wherein R 2 has the following structure:

wherein R 4 and R 5 are a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, an isopropylene group, or an isobutylene group and R 6 is the group which will decompose.

10. The photoresist of claim 1 , wherein R 2 has the following structure:

wherein R 4 is a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, an isopropylene group, or an isobutylene group and R 6 is the group which will decompose.

11. A photoresist comprising:

a polymer having a group which will decompose bonded to a hydrocarbon backbone, a re-attachment group bonded to the group which will decompose, wherein the re-attachment group is OCH 3 , OC 2 H 5 , OC 3 H 7 , OC 4 H 9 , epoxy, CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , or CH 2 CH 2 OC 4 H 9 ; and a repeating unit derived from a non-leaving monomer with a cross-linking site, wherein the cross-linking site is bonded to the hydrocarbon backbone with a single chain of carbon-carbon bonds between a carbon atom within the hydrocarbon backbone and the cross-linking site, wherein the group which will decompose has one of the following structures:

wherein R 10 is a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, or an isopentyl group; R 7 , R 8 and R 9 are hydrogen, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, or an isopentyl group; R 11 is CH 2 , C 2 H 4 , or C 3 H 6 ; and R 12 is CH 3 , C 2 H 5 , OH, OCH 3 , or OC 2 H 5 , wherein the cross-linking site has the following structure:

wherein R 14 is H, OH, OCH 3 , OC 2 H 5 , OC 3 H 7 , OC 4 H 9 , epoxy, CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , CH 2 CH 2 OC 7 H 9 , and wherein R 15 is a C 1 to C 5 alkylene chain.

12. The photoresist of claim 11 , wherein the group which will decompose has the following structure:

13. The photoresist of claim 11 , wherein the group which will decompose has the following structure:

14. A method of manufacturing a semiconductor device, the method comprising:

dispensing a photoresist onto a substrate, wherein the photoresist comprises a polymer having a hydrocarbon backbone, a high etch resistance structure attached to a hydrocarbon backbone, wherein the high etch resistance structure comprises a structure with at least two rings bonded to a carbon in the hydrocarbon backbone through only carbon-carbon bonds, and a group which will decompose bonded to the high etch resistance structure;

exposing the photoresist to a patterned energy source, wherein the exposing the photoresist induces a cross-linking reaction in a monomer with a cross-linking site; and

developing the photoresist.

15. The method of claim 14 , wherein the high etch resistance structure has the following structure:

wherein R 1 is a methyl group, and ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, or an isopentyl group and wherein R 2 has the following structure:

wherein R 6 is the group which will decompose.

16. The method of claim 14 , wherein the high etch resistance structure has the following structure:

wherein R 3 is a C 1 to C 3 alkylene chain and R 2 has the following structure:

wherein R 4 is a C 1 to C 8 straight or branched alkylene chain and R 6 is the group which will decompose.

17. The method of claim 14 , wherein the cross-linking reaction includes a cross-linking agent.

18. The method of claim 17 , wherein the cross-linking agent has the following structure:

wherein R 25 is hydrogen, epoxy, CH 2 OCH 3 , CH 2 OC 2 H 5 , CH 2 OC 3 H 7 , CH 2 OC 4 H 9 , CH 2 CH 2 OCH 3 , CH 2 CH 2 OC 2 H 5 , CH 2 CH 2 OC 3 H 7 , CH 2 CH 2 OC 4 H 9 .

19. The method of claim 14 , wherein the developing the photoresist further comprises applying a negative tone developer.