CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS
To improve the single crystallinity of a stacked film in which a ZrO 2 film and a Y 2 O 3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO 2 film and a Y 2 O 3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°.
1 . A crystal film comprising:
a Zr film; and
a stacked film in which a ZrO 2 film and a Y 2 O 3 film are stacked or a YSZ film, formed on said Zr film,
wherein a peak half-value width when said stacked film or the YSZ film is evaluated by X-ray diffraction is 0.05° to 2.0°.
2 . The crystal film according to claim 1 , wherein thickness of said Zr film is 0.2 nm to 30 nm.
3 . The crystal film according to claim 1 , wherein said stacked film or said YSZ film is an oriented film oriented in (100).
4 . The crystal film according to claim 1 , wherein said crystal film is formed on a substrate having a (100) crystal plane.
5 . The crystal film according to claim 1 , wherein:
on said stacked film or said YSZ film, a Pt film oriented in (100) is formed; and
a peak half-value width when said Pt film is evaluated by X-ray diffraction is 0.05° to 2.0°.
6 . The crystal film according to claim 5 , wherein:
dielectric film is formed on said Pt film; and
said dielectric film is represented by a general formula ABO 3 , being a film containing a perovskite material, A including at least one element selected from the group consisting of Al, Y, Na, K, Rb, Cs, La, Sr, Cr, Ag, Ca, Pr, Nd, Bi and an element of the lanthanum series in the periodic table, B including at least one element selected from the group consisting of Al, Ga, In, Nb, Sn, Ti, Ru, Rh, Pd, Re, OSirPt, U, Co, Fe, Ni, Mn, Cr, Cu, Mg, V, Nb, Ta, Mo and W, or being a film containing a bismuth layered-structure ferroelectric crystal having a structure in which a bismuth oxide layer and a perovskite-type structure block are stacked alternately, said perovskite-type structure block being composed of at least one element L selected from Li, Na, K, Ca, Sr, Ba, Y, Bi, Pb and a rare earth element, at least one element R selected from Ti, Zr, Hf, V, Nb, Ta, W, Mo, Mn, Fe, Si and Ge, and oxygen.
7 . The crystal film according to claim 6 , wherein said dielectric film is oriented in (001).
8 . The crystal film according to claim 5 , wherein:
on said Pt film, a PZT film oriented in (001) is formed; and
a peak half-value width when said PZT film is evaluated by X-ray diffraction is 0.05° to 2.0°.
9 . A method for manufacturing a crystal film, comprising the steps of:
forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having Zr; and
forming a stacked film in which a ZrO 2 film and a Y 2 O 3 film are stacked or a YSZ film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having Zr, a vapor deposition material having Y, and oxygen.
10 . The method for manufacturing a crystal film according to claim 9 , wherein:
said substrate has a (100) crystal plane; and
said stacked film or said YSZ film is oriented in (100).
11 . The method for manufacturing a crystal film according to claim 9 , wherein a peak half-value width when said stacked film or said YSZ film is evaluated by X-ray diffraction is 0.05° to 2.0°.
12 . The method for manufacturing a crystal film according to claim 9 , wherein:
on said stacked film or said YSZ film, an electroconductive film oriented in (100) is formed; and
on said electroconductive film, a dielectric film oriented in (001) is formed.
13 . The method for manufacturing a crystal film according to claim 12 , wherein:
said electroconductive film is a film containing a metal; and
said dielectric film is represented by a general formula ABO 3 , being a film containing a perovskite material, A including at least one element selected from the group consisting of Al, Y, Na, K, Rb, Cs, La, Sr, Cr, Ag, Ca, Pr, Nd, Bi and an element of the lanthanum series in the periodic table, B including at least one element selected from the group consisting of Al, Ga, In, Nb, Sn, Ti, Ru, Rh, Pd, Re, OSirPt, U, Co, Fe, Ni, Mn, Cr, Cu, Mg, V, Nb, Ta, Mo and W, or being a film containing a bismuth layered-structure ferroelectric crystal having a structure in which a bismuth oxide layer and a perovskite-type structure block are stacked alternately, said perovskite-type structure block being composed of at least one element L selected from Li, Na, K, Ca, Sr, Ba, Y, Bi, Pb and a rare earth element, at least one element R selected from Ti, Zr, Hf, V, Nb, Ta, W, Mo, Mn, Fe, Si and Ge, and oxygen.
14 . The method for manufacturing a crystal film according to claim 12 , wherein:
said electroconductive film is a Pt film; and
a peak half-value width when said Pt film is evaluated by X-ray diffraction is 0.05° to 2.0°.
15 . The method for manufacturing a crystal film according to claim 12 , wherein:
said dielectric film is a PZT film; and
a peak half-value width when said PZT film is evaluated by X-ray diffraction is 0.05° to 2.0°.
16 . The method for manufacturing a crystal film according to claim 9 , wherein said vapor deposition material having Zr is a vapor deposition material having a Zr single crystal.
17 . A vapor deposition apparatus comprising:
a first chamber;
a substrate holder holding a substrate, disposed in said first chamber;
a vapor deposition material having Zr and a vapor deposition material having Y;
a first heating mechanism heating said vapor deposition material;
a gas-supplying mechanism supplying oxygen gas into said first chamber; and
an evacuating mechanism evacuating an inside of said first chamber.
18 . The vapor deposition apparatus according to claim 17 , wherein:
heating and evaporation of said Zr by said first heating mechanism allows forming a Zr film on said substrate; and
heating and evaporation of said vapor deposition materials by said first heating mechanism, and supply of said oxygen gas by said gas-supplying mechanism allow forming a stacked film in which a ZrO 2 film and a Y 2 O 3 film are stacked or a YSZ film on said Zr film.
19 . The vapor deposition apparatus according to claim 17 , wherein:
said apparatus has a second heating mechanism heating the substrate; and
when heating and evaporating said vapor deposition material, said second heating mechanism heats said substrate to give a temperature of 700° C. or more.
20 . The vapor deposition apparatus according to claim 17 , wherein said first heating mechanism is a mechanism that heats said vapor deposition material by an electron beam.
21 . The vapor deposition apparatus according to claim 17 , wherein said vapor deposition material having Zr and the vapor deposition material having Y are a vapor deposition material having a Zr single crystal and a vapor deposition material having Y.
22 . A multi-chamber apparatus comprising:
said vapor deposition apparatus according to claim 17 ;
a transfer room connected to said first chamber via a first gate valve;
a transfer mechanism transferring said substrate, disposed in said transfer room;
a second chamber connected to said transfer room via a second gate valve;
a first sputtering device forming an electroconductive film on said stacked film or said YSZ film in said second chamber;
a third chamber connected to said transfer room via a third gate valve; and
a film-forming apparatus forming a dielectric film on said electroconductive film in said third chamber.
23 . The multi-chamber apparatus according to claim 22 , wherein said film-forming apparatus is an apparatus that forms a dielectric film by coating a sol-gel solution by spin-coating.
24 . The multi-chamber apparatus according to claim 22 , wherein said film-forming apparatus is a second sputtering device that forms said dielectric film by a sputtering method.