High strength through-substrate vias

1. A component, comprising:

a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces, each conductive element containing an alloy of a metal material selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth, wherein the conductive elements are filled vias, and wherein at least one of the vias includes a concave face exposed at least one of the first and second surfaces of the support structure and defining a first cavity within a portion of the at least one of the vias that defines a second cavity with a second bonding metal mass disposed at least partially within the first cavity, wherein the first and second cavities are laterally offset from one another.

2. The component of claim 1 , wherein at least some of the conductive elements are filled vias extending between the first and second surfaces and each defining a respective first end surface exposed at the first surface and a second end surface exposed at the second surface.

3. The component of claim 1 , wherein at least some of the conductive elements are distribution elements that extend in a thickness between the first and second surfaces and extend in a length in a direction along at least one of the first and second surfaces.

4. The component of claim 1 , the alloy having a composition that varies with distance in a direction across the conductive element substantially parallel to the first and second surfaces of the support structure.

5. The component of claim 4 , wherein the support structure includes edge surfaces extending between the first and second surfaces and at least partially surrounding the conductive elements, and wherein the alloy composition varies from a first concentration to a second, lower concentration along the direction.

6. The component of claim 1 , wherein the at least one direction along which the alloy composition varies is substantially perpendicular to the first and second surfaces of the support structure.

7. The component of claim 1 , wherein the alloy composition varies from a first concentration toward the first surface to a second, lower concentration toward the second surface.

8. The component of claim 1 , wherein the conductive elements include a continuous layer of the additive adjacent a portion of the conductive elements including both the metal material and the additive, and wherein the direction along which the alloy composition varies is a direction away from the continuous layer.

9. The component of claim 1 , wherein the support structure consists essentially of at least one of, semiconductor, glass, ceramic, liquid crystal polymer material, copper, sapphire, or aluminum.

10. The component of claim 1 , wherein the alloy has a first mechanical strength and the metal material has a second mechanical strength, and wherein the first mechanical strength is at least 20% greater than the second mechanical strength.

11. The component of claim 1 , wherein the alloy has a resistivity that varies with a concentration of additive therein and a mechanical strength that varies with the concentration of additive therein, and wherein the concentration of additive material in the alloy material is configured to maximize the mechanical strength while the resistivity is between 2.5 to 10 micro-ohm-centimeters.

12. The component of claim 1 , wherein the additive is a layer of additive material diffused into at least one adjacent layer of the metal material.

13. The component of claim 12 , wherein the additive material layer is adjacent to the edge surface of the conductive element, and wherein the layer of the metal material overlies the additive material layer.

14. The component of claim 12 , wherein the additive material layer overlies the layer of the metal material.

15. The component of claim 14 , wherein a second layer of the metal material further overlies the additive material layer, the additive being diffused into both the first and second layers of the wiring metal material.

16. The component of claim 1 , further including a bonding metal mass disposed at least partially within the first cavity.

17. The component of claim 16 , further including a barrier layer disposed between the concave face and the bonding metal mass.

18. The component of claim 1 , further including one or more active devices electronically interconnected with at least some of the conductive elements.

19. A component, comprising:

a support structure having first and second spaced-apart and parallel surfaces and a plurality of metallic vias extending in a direction between the first and second surfaces, each via containing an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth, at least one via including a concave end surface exposed at at least one of the first and second surfaces of the support structure and defining a cavity within the via;

wherein at least one of the vias includes a concave face exposed at least one of the first and second surfaces of the support structure and defining a first cavity within a portion of the at least one of the vias that defines a second cavity with a second bonding metal mass disposed at least partially within the first cavity, wherein the first and second cavities are laterally offset from one another; and

a bonding metal mass disposed at least partially within the first cavity

wherein the alloy has a first mechanical strength and the wiring metal material has a second mechanical strength, the first mechanical strength characteristic being greater than the second mechanical strength.