Screen printing electrical contacts to nanowire areas
A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
1. A silicon nanostructured device comprising:
a non-nanostructured substrate;
a nanostructured area disposed on and contacting a surface of the substrate;
a passivating layer coating the nanostructured area, the passivating layer comprising one of aluminum oxide, silicon dioxide, or silicon nitride,
one or more contacts comprising a comb-like pattern of metal directly contacting the nanostructured area; and
a p-n junction below the nanostructured area.
2. The device of claim 1 , suitable for use as a solar cell.
3. The device of claim 2 , wherein the nanostructured area comprises a nanowire array.
4. The device of claim 3 , wherein the p-n junction is below the nanowire array.
5. The device of claim 2 , wherein the passivating layer coating the nanowire array comprises silicon dioxide.
6. The device of claim 2 , wherein the passivating layer coating the nanowire array comprises silicon nitride.
7. The device of claim 2 , wherein nanowires in the nanowire array have lengths of between about 150 nm and about 400 nm and diameters of between about 30 nm and about 200 nm.
8. The device of claim 2 , wherein one third to one half of a volume of the nanowire array is silicon.
9. The device of claim 2 , wherein nanowires in the nanowire array are tapered such that bases of the nanowires have larger diameters than tips of the nanowires.
10. The device of claim 1 , wherein the one or more screen printed contacts comprise metal lines including glass frit.