Distributed Bragg reflector on an aluminum package for an LED
A light-emitting diode (LED) assembly includes an aluminum substrate, a silver layer, a distributed Bragg reflector (DBR) and an LED device. The aluminum substrate has a top surface whose length and width are each more than once centimeter. The silver layer is disposed over the entire top surface of the aluminum substrate. The DBR is disposed over the entire upper surface of the silver layer. The DBR includes an upper reflector layer and a lower reflector layer. The lower reflector layer contacts the upper surface of the silver layer. The Led device is attached to the upper reflector layer of the DBR, but the LED device is not disposed over the entire upper reflector layer. In one embodiment, the silver layer is deposited on the substrate using physical vapor deposition. In another embodiment, multiple pairs of lower reflector and higher reflector layers are included.
1. An apparatus comprising:
an aluminum substrate having a top surface whose length and width are each more than one centimeter, wherein the aluminum substrate is an aluminum core printed circuit board;
a silver layer covering the entire top surface of the aluminum substrate, wherein the silver layer has an upper surface;
a distributed Bragg reflector (DBR) disposed over the entire upper surface of the silver layer, wherein the DBR includes an upper reflector layer and a lower reflector layer, and wherein the lower reflector layer contacts the upper surface of the silver layer; and
a light emitting diode (LED) device that is attached to the upper reflector layer of the DBR.
2. The apparatus of claim 1 , wherein the silver layer is deposited over the aluminum using physical vapor deposition.
3. The apparatus of claim 1 , wherein the silver layer has a thickness of less than 200 nanometers.
4. The apparatus of claim 1 , wherein the LED device is not disposed over the entire upper reflector layer.
5. The apparatus of claim 1 , wherein the LED has a sapphire substrate adjacent to a total internal reflection (TIR) layer, and wherein the TIR layer is attached to the upper reflector layer of the DBR.
6. The apparatus of claim 5 , wherein the TIR layer is attached to the upper reflector layer by silicone glue.
7. The apparatus of claim 5 , wherein the TIR layer is composed of a low-index dielectric material taken from the group consisting of: SiO 2 , MgF 2 , Al 2 O 3 and CaF.
8. The apparatus of claim 1 , wherein the upper reflector layer is made of a high-index dielectric material taken from the group consisting of: TiO 2 , ZrO 2 , ZnSe, Si 3 N 4 , Nb 2 O 5 and Ta 2 O 5 , and wherein the lower reflector layer is made of a low-index dielectric material taken from the group consisting of: SiO 2 , MgF 2 , Al 2 O 3 and CaF 2 .
9. The apparatus of claim 8 , wherein a thickness of the upper reflector layer is optimized based on the high-index dielectric material chosen, and wherein a thickness of the lower reflector layer is optimized based on the low-index dielectric material chosen.
10. The apparatus of claim 9 , wherein the thickness of the upper reflector layer has a thickness in the range between 20-150 nm, and wherein the lower reflector layer has a thickness in the range of 20-150 nm.
11. The apparatus of claim 1 , wherein the aluminum substrate has a thickness of more than 500,000 nanometers.
12. The apparatus of claim 1 , wherein each of the upper reflector layer and the lower reflector layer has a thickness of less than 200 nanometers.
13. The apparatus of claim 1 , wherein the DBR includes a plurality of reflector layers between the upper reflector layer and the lower reflector layer.