Semiconductor structure with different fins of FinFETs
View Patent ↗A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the FinFETs are defined from the substrate. The even fins of the FinFETs are different from the odd fins of the FinFETs in at least one of the width and the material, and may be further different from the odd fins of the FinFETs in the height.
1. A semiconductor structure for forming FinFETs, comprising
a semiconductor substrate, wherein a top portion of the semiconductor substrate comprises a semiconductor material;
a plurality of odd fins of the FinFETs on the semiconductor substrate, being defined from the semiconductor substrate and being formed of the semiconductor material; and
a plurality of even fins of the FinFETs on the semiconductor substrate between the odd fins of the FinFETs, being different from the odd fins of the FinFETs in at least one of width and material, wherein the plurality of even fins are in direct contact with the semiconductor material.
2. The semiconductor structure of claim 1 , wherein the even fins of the FinFETs are further different from the odd fins of the FinFETs in height.
3. The semiconductor structure of claim 1 , wherein the even fins of the FinFETs comprise an epitaxy material.
4. The semiconductor structure of claim 3 , wherein the odd fins of the FinFETs comprise Si and the even fins of the FinFETs comprise SiC or SiGe.
5. The semiconductor structure of claim 1 , wherein the odd fins of the FinFETs comprise Si.
6. The semiconductor structure of claim 1 , wherein the even fins of the FinFETs comprise SiC or SiGe.
7. The semiconductor structure of claim 1 , wherein the odd fins of the FinFETs are electrically connected to the semiconductor substrate.
8. The semiconductor structure of claim 1 , wherein the semiconductor substrate is a single layer structure.
9. A semiconductor structure for forming FinFETs, comprising
a semiconductor substrate, wherein a top portion of the semiconductor substrate comprises a semiconductor material;
a plurality of odd fins of the FinFETs on the semiconductor substrate and being formed of the semiconductor material, wherein the plurality of odd fins and the semiconductor substrate are in direct contact with each other; and
a plurality of even fins of the FinFETs on the semiconductor substrate between the odd fins of the FinFETs, being different from the odd fins of the FinFETs in at least one of width and material, wherein the plurality of even fins are in direct contact with the semiconductor material.
10. The semiconductor structure of claim 9 , wherein the even fins of the FinFETs are further different from the odd fins of the FinFETs in height.
11. The semiconductor structure of claim 9 , wherein the even fins of the FinFETs comprise an epitaxy material.
12. The semiconductor structure of claim 11 , wherein the odd fins of the FinFETs comprise Si and the even fins of the FinFETs comprise SiC or SiGe.
13. The semiconductor structure of claim 9 , wherein the odd fins of the FinFETs comprise Si.
14. The semiconductor structure of claim 9 , wherein the even fins of the FinFETs comprise SiC or SiGe.
15. A semiconductor structure for forming FinFET, comprising
a semiconductor substrate, wherein a top portion of the semiconductor substrate comprises a semiconductor material:
a plurality of first fins of the FinFETs on the semiconductor substrate and being formed of the semiconductor material, wherein the plurality of first fins and the semiconductor substrate are in direct contact with each other; and
a plurality of second fins of the FinFETs on the semiconductor substrate, each of the second fins of the FinFETs is located between two first fins of the FinFETs, and the second fins of the FinFETs are different from the first fins of the FinFETs in at least one of width and material, wherein the plurality of second fins are in direct contact with the semiconductor material.
16. The semiconductor structure of claim 15 , wherein the second fins of the FinFETs are further different from the first fins of the FinFETs in height.
17. The semiconductor structure of claim 15 , wherein the second fins of the FinFETs comprise an epitaxy material.
18. The semiconductor structure of claim 17 , wherein the first fins of the FinFETs comprise Si and the second fins of the FinFETs comprise SiC or SiGe.
19. The semiconductor structure of claim 15 , wherein the first fins of the FinFETs comprise Si.
20. The semiconductor structure of claim 15 , wherein the second fins of the FinFETs comprise SiC or SiGe.