Composition for resist patterning and method of manufacturing optical structures using imprint lithography
Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.
1. A nanoimprint lithography (NIL) ink comprising:
a thiol;
an ene monomer; and
a polymerization initiator,
wherein the NIL ink has a refractive index between 1.6 and 1.95 and a transmittance per micron thickness between 80% and 99%.
2. The NIL ink of claim 1 , wherein the thiol comprises at least one of ethanedithiol; biphenyl-4,4′-dithiol; 1,4-Bis(4-mercaptophenyl)benzene; 1,3,4-thiadiazole-2,5-dithiol; (1,2,4) thiadizole-3,5-dithiol; poly(ethylene glycol) dithiol; 1,3,5-trimercaptobenzene; 4-mercaptomethy-1,8-dimercapt-3,6-dithiaoctane; 5,7-dimercaptomethyl-1,11-dimercapto-3,6-trithiaundecane; bis(mercaptoethyl)sulfide; 2,5-bis(mercaptomethyl)-1,4-dithiane, tetra(ethylene glycol) dithiol; 2,2′-(ethylenedioxy)diethanethiol; 1,1′,4′,1″-terphenyl-4-thiol, 2-thiazoline-2-thiol; 5-bromopyridine-2-thiol; benzene-1,3-dithiol; benzene-1,4-dithiol; 1,2-pentanedithiol; pentaerythritol tetrakis(3-mercaptopropionate) or biphenyl-4-thiol.
3. The NIL ink of claim 1 , wherein the ene monomer comprises at least one of: ethoxylate diacrylate; bisphenol A dimethacrylate; ethylene glycol diacrylate; ethylene glycol diacrylate; pentaerythritol tetraacrylate; trimethylolpropane ethoxylate triacrylate; glycerol propoxylate (1P0/0H) triacrylate; tetravinyl silane; tetravinyl tin; bisphenol A; or bisphenol A ethoxylate dimethacrylate.
4. The NIL ink of claim 1 , wherein the polymerization initiator comprises at least one of a photo initiator or a thermal initiator in an amount between 0.1% and 5% in total solids.
5. The NIL ink of claim 1 , further comprising an oxide of a metal from Groups 2B or 4B of the periodic table in an amount between 0.1 and 50 weight/weight %.
6. The NIL ink of claim 1 , further comprising titanium dioxide in an amount between 10 and 40 weight/weight %.
7. The NIL ink of claim 1 , further comprising a stabilizer.
8. The NIL ink of claim 1 , wherein the thiol and ene monomer are present in a stoichiometric ratio.
9. The NIL ink of claim 1 , further comprising a solvent.
10. A method of manufacturing an optical structure, the method comprising:
obtaining a nanoimprint lithography (NIL) ink comprising a thiol, an ene monomer, and a polymerization initiator, wherein the NIL ink has a refractive index between 1.6 and 1.95 and a transmittance per micron thickness between 80% and 99%; and
patterning the NIL ink to form an optical structure.
11. The method of claim 10 , wherein patterning the NIL ink comprises:
depositing the NIL ink on a substrate;
imprinting the deposited NIL ink with a mask; and
curing the imprinted NIL ink.
12. The method of claim 11 , wherein the optical structure has a refractive index between 1.6 and 1.95 and a transmission per micron thickness between 80% and 99%.
13. The method of claim 11 , wherein patterning the NIL ink to form the optical structure further comprises annealing the cured NIL ink.
14. The method of claim 11 , wherein depositing the NIL ink on the substrate comprises droplet dispensing the NIL on the substrate.
15. The method of claim 11 , wherein depositing the NIL ink on the substrate comprises spin coating, spray coating, or drop casting the NIL ink on the substrate.
16. The method of claim 11 , wherein curing the imprinted NIL ink comprises applying UV radiation to the imprinted NIL ink.
17. The method of claim 11 , wherein curing the imprinted NIL ink comprises applying thermal radiation to the imprinted ink.
18. The method of claim 10 , wherein the NIL ink further comprises at least oxide of a metal from Groups 2B or 4B of the periodic table in an amount between 0.1 and 50 weight/weight %.
19. The method of claim 10 , wherein the NIL ink further comprises titanium dioxide in an amount less than 40 weight/weight %.
20. The method of claim 10 , wherein the optical structure is formed without annealing.