FILM DEPOSITION MATERIAL, SEALING FILM USING THE SAME AND USE THEREOF
The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.
1 . A film deposition material for a chemical vapor deposition method, comprising:
an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom.
2 . The film deposition material according to claim 1 ,
wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a disiloxane compound represented by the following formula (1):
wherein each of R 1 and R 2 represents a hydrocarbon group having a carbon number of 1 to 20; R 1 and R 2 may bond with each other to form a cyclic structure; and each of R 3 and R 4 represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom.
3 . The film deposition material according to claim 1 ,
wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a silane compound represented by the following formula (2):
wherein each of R 5 and R 6 represents a hydrocarbon group having a carbon number of 1 to 20; R 5 and R 6 may bond with each other to form a cyclic structure; each of R 7 , R 8 and R 9 represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom; and m represents an integer of 1 to 20.
4 . The film deposition material according to claim 1 ,
wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a cyclic silane compound represented by the following formula (3):
wherein each of R 10 and R 11 represents a hydrocarbon group having a carbon number of 1 to 20; R 10 and R 11 may bond with each other to form a cyclic structure; R 12 represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom; and n represents an integer of 4 to 40.
5 . The film deposition material according to claim 2 ,
wherein in formula (1), (2) or (3), both R 1 and R 2 , both R 5 and R 6 or both R 10 and R 11 are methyl or are methyl and ethyl, respectively.
6 . The film deposition material according to claim 2 ,
wherein the organosilicon compound is 1,3-diisopropyldisiloxane, 1,3-diisopropyl-1,3-dimethyldisiloxane, 1,3-diisopropyl-1,1,3,3-tetramethyldisiloxane, 1,3-di-sec-butyldisiloxane, 1,3-di-sec-butyl-1,3-dimethyldisiloxane or 1,3-di-sec-butyl-1,1,3,3-tetramethyldisiloxane.
7 . The film deposition material according to claim 3 ,
wherein the organosilicon compound is isopropylsilane, isopropylmethylsilane, isopropyldimethylsilane, diisopropylsilane, diisopropylmethylsilane, triisopropylsilane, sec-butylsilane, sec-butylmethylsilane, sec-butyldimethylsilane, di-sec-butylsilane, di-sec-butylmethylsilane or tri-sec-butylsilane.
8 . The film deposition material according to claim 4 ,
wherein the organosilicon compound is 1,2,3,4-tetraisopropylcyclotetrasilane, 1,2,3,4,5-pentaisopropylcyclopentasilane, 1,2,3,4,5,6-hexaisopropylcyclohexasilane, 1,1,2,2,3,3,4,4-octaisopropylcyclotetrasilane, 1,1,2,2,3,3,4,4,5,5-decaisopropylcyclopentasilane or 1,1,2,2,3,3,4,4,5,5,6,6-undecaisopropylcyclohexasilane.
9 . The film deposition material according to claim 1 ,
wherein the chemical vapor deposition method is a plasma enhanced chemical vapor deposition method.
10 . The film deposition material according to claim 1 ,
wherein the chemical vapor deposition method is a catalytic chemical vapor deposition method.
11 . A sealing film, deposited by a chemical vapor deposition method using the film deposition material according to claim 1 .
12 . A sealing film, obtained by further subjecting the sealing film according to claim 11 to a heat treatment, an ultraviolet irradiation treatment or an electron beam treatment.
13 . A gas barrier equipment and materials, using the sealing film according to claim 11 as a gas barrier layer.
14 . A flat-panel display device, comprising:
the sealing film according to claim 11 .
15 . A semiconductor device, comprising:
the sealing film according to claim 11 .
16 . The film deposition material according to claim 3 ,
wherein in formula (1), (2) or (3), both R 1 and R 2 , both R 5 and R 6 or both R 10 and R 11 are methyl or are methyl and ethyl, respectively.
17 . The film deposition material according to claim 4 ,
wherein in formula (1), (2) or (3), both R 1 and R 2 , both R 5 and R 6 or both R 10 and R 11 are methyl or are methyl and ethyl, respectively.