Efficiency-enhanced thermoelectric devices

1. A thermoelectric device comprising:

a first electrical region in electrical contact with a first electrical terminal;

a second electrical region in electrical contact with a second electrical terminal; and

a thermoelectric gate in thermal contact with a heat-conducting thermal terminal, said thermoelectric gate interposed between said first electrical region and said second electrical region, such that said thermoelectric gate is in contact with said first electrical region and with said second electrical region,

wherein heat is transferred between said heat-conducting thermal terminal and said thermoelectric gate in accordance with current flow between said first terminal and said second terminal; and

wherein:

said heat is transferred from said thermoelectric gate to said heat-conducting thermal terminal in accordance with current flow in a first direction;

said heat is transferred from said heat-conducting thermal terminal to said thermoelectric gate in accordance with current flow in a second direction; or

a combination thereof, and

wherein said thermoelectric device comprises:

a junction with a positive region, an intrinsic region, and a negative region of a P-I-N junction;

wherein said positive region is p-doped and said negative region is n-doped.

2. The thermoelectric device of claim 1 , further comprising a temperature-control configuration configured to cause said first electrical region to assume a first temperature and said second electrical region to assume a second temperature different than said first temperature.

3. The thermoelectric device of claim 1 , wherein a quantity of said heat transfer is proportional to a quantity of said current flow.

4. The thermoelectric device of claim 1 , wherein said heat-conducting thermal terminal is thermally isolated from both said first electrical region and said second electrical region.

5. The thermoelectric device of claim 1 , wherein:

said first electrical region is in a first electrical localized state; and

said second electrical region is in a second electrical localized state.

6. The thermoelectric device of claim 1 , comprising a junction with a positive region, an intrinsic region, and a negative region of a P-I-N junction,

wherein:

the thermoelectric gate is the intrinsic region of the P-I-N junction;

the first electrical region and the second electrical region are different regions, each of the first electrical region and the second electrical region selected from the group consisting of the positive region of the P-I-N junction and the negative region of the P-I-N junction.

7. The thermoelectric device of claim 1 , wherein said thermoelectric gate includes a superlattice.

8. The thermoelectric device of claim 1 , wherein:

said first electrical terminal is operative to impart a first energy E 1 to charge carriers in said first electrical region;

said second electric terminal is operative to impart a second energy E 2 to charge carriers in said second electrical region;

such that a difference between said second energy E 2 and said first energy E 1 is an energy differential W.

9. The thermoelectric device of claim 8 , further comprising a temperature-control configuration configured to cause the first electrical region to assume a first temperature and the second electrical region to assume a second temperature different than the first temperature.

10. The thermoelectric device of claim 8 , wherein the energy differential W is substantially greater than the product of the temperature of the thermoelectric gate and Boltzmann's constant, k.

11. The thermoelectric device of claim 8 , wherein any one of the charge carriers traverses the thermoelectric gate responsively to acquiring energy substantially equal to the energy differential W.

12. A method for transferring heat using a thermoelectric device comprising;

providing a thermoelectric device comprising:

a first electrical region in electrical contact with a first electrical terminal;

a second electrical region in electrical contact with a second electrical terminal; and

a thermoelectric gate in thermal contact with a heat-conducting thermal terminal, said thermoelectric gate interposed between said first region and said second region, such that said thermoelectric gate is in contact with said first electrical region and with said second electrical region,

wherein heat is transferred between said thermal terminal and said thermal gate is in accordance with current flow between said first electric terminal and said second electric terminal; and wherein:

said heat is transferred from said thermoelectric gate to said heat-conducting thermal terminal in accordance with current flow in a first direction;

said heat is transferred from said heat-conducting thermal terminal to said thermoelectric gate in accordance with current flow in a second direction; or

a combination thereof, and

wherein said thermoelectric device comprises:

a junction with a positive region, an intrinsic region, and a negative region of a P-I-N junction;

wherein said positive region is p-doped and said negative region is n-doped;

adjusting current passing between said first electrical terminal and said second electrical terminal; and

transferring heat between said thermoelectric gate and said heat-conducting thermal terminal in accordance with said current passing between said first electrical terminal and said second electrical terminal.

13. The method of claim 12 , further comprising causing said first electrical region to assume a first temperature and said second electrical region to assume a second temperature different than said first temperature.

14. The method of claim 12 , wherein a quantity of said heat is proportional to a quantity of said current flow.

15. The method of claim 12 , wherein said heat-conducting thermal terminal is thermally isolated from both said first electrical region and said second electrical region.

16. The method of claim 12 , wherein said thermoelectric device comprises a P-I-N junction comprising a positive region, an intrinsic region, and a negative region, wherein:

said thermoelectric gate is said intrinsic region of said P-I-N junction;

said first electrical region and said second electrical region are different regions, each of said first electrical region and said second electrical region selected from the group consisting of the positive region of said P-I-N junction and the negative region of said P-I-N junction.

17. A method for generating electricity using a thermoelectric device comprising;

providing a thermoelectric device comprising:

a first electrical region in electrical contact with a first electrical terminal;

a second electrical region in electrical contact with a second electrical terminal; and

a thermoelectric gate in thermal contact with a heat-conducting thermal terminal, said thermoelectric gate interposed between said first region and said second region, such that said thermoelectric gate is in contact with said first electrical region and with said second electrical region,

wherein heat is transferred between said thermal terminal and said thermal gate is in accordance with current flow between said first terminal and said second terminal; and wherein:

said heat is transferred from said thermoelectric gate to said heat-conducting thermal terminal in accordance with current flow in a first direction;

said heat is transferred from said heat-conducting thermal terminal to said thermoelectric gate in accordance with current flow in a second direction; or

a combination thereof, and

wherein said

thermoelectric device comprises:

a junction with a positive region, an intrinsic region, and a negative region of a P-I-N junction;

wherein said positive region is p-doped and said negative region is n-doped;

employing heat transfer between said thermoelectric gate and said heat-conducting thermal terminal; and

causing current to pass between said first electrical terminal and said second electrical terminal in accordance with said heat transfer.

18. The method of claim 17 , further comprising causing said first electrical region to assume a first temperature and said second electrical region to assume a second temperature different than said first temperature.

19. The method of claim 17 , wherein a quantity of said heat is proportional to a quantity of said current flow.