Clad material for LED light-emitting element holding substrate, and method for manufacturing same
Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14×10 −6 /K or less and the thermal conductivity at a temperature of 25° C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.
1. A clad material for use with a substrate for holding an LED light-emitting element, formed by lamination of a plurality of layers consisting of different materials, and bonded to a group III-V semiconductor crystal surface via a metal layer, having a coefficient of linear expansion of 14 ×10 −6 /K or less, and a thermal conductivity of 200 W/mK or more at a temperature of 25 ° C.,
consisting of five layers formed by alternately laminating three copper layers and two molybdenum layers, the copper and molybdenum being at least 99.9 percent purity,
wherein a proportion of a volume occupied by the molybdenum layers relative to that of the clad material is 20 to 70 vol %, a thickness difference between any two copper layers is 5% or less, a thickness difference between the two molybdenum layers is 5% or less, and a surface roughness (Ra) of the clad material is 0.01 to 0.09 μm, and
wherein a volume resistivity of the clad material is 10 −9 to 10 −5 106·m.
2. The clad material for use with a substrate for holding an LED light-emitting element of claim 1 , formed by alternately laminating copper layers and molybdenum layers.
3. A clad material for use with a substrate for holding an LED light-emitting element, formed by lamination of a plurality of layers consisting of different materials, and bonded to a group III-V semiconductor crystal surface via a metal layer, having a coefficient of linear expansion of 14×10 −6 /K or less, and a thermal conductivity of 200 W/mK or more at a temperature of 25 ° C.,
consisting of three layers formed by alternately laminating two copper layers and a molybdenum layer, the copper and molybdenum being at least 99.9 percent purity,
wherein a proportion of a volume occupied by the molybdenum layer relative to that of the clad material is 10 to 60 vol %, a thickness difference between the two copper layers is 5% or less, and a surface roughness (Ra) of the clad material is 0.01 to 0.09 μm, and
wherein a volume resistivity of the clad material is 10 −9 to 10 −5 Ω·m.
4. The clad material for use with a substrate for holding an LED light-emitting element of claim 1 , having a plate thickness of 0.05 mm to 0.2mm.
5. The clad material for use with a substrate for holding an LED light-emitting element of claim 3 , having a plate thickness of 0.05 mm to 0.2 mm.
6. The clad material for use with a substrate for holding an LED light-emitting element of claim 1 , having an Ni plating layer or an Ni plating layer +Au plating layer of thickness 0.5 to 5 μm formed on the surface of the clad material.
7. The clad material for use with a substrate for holding an LED light-emitting element of claim 3 , having an Ni plating layer or an Ni plating layer +Au plating layer of thickness 0.5 to 5 μm formed on the surface of the clad material.
8. A method of manufacturing the clad material for use with a substrate for holding an LED light-emitting element of claim 1 , the method of manufacturing a clad material comprising a step of laminating a plurality of layers consisting of different materials, then bonding the laminate by hot uniaxial processing with an applied pressure of at least 4.9 MPa and at most 14.7 MPa, at a temperature of at least 850 ° C. and at most 1000° C.
9. The method of manufacturing a clad material of claim 8 , wherein the bonding by hot uniaxial processing is performed in a nitrogen atmosphere, an argon atmosphere, a helium atmosphere or in a vacuum.
10. An LED light-emitting element manufactured by a method comprising:
(1) epitaxially growing a group II-V semiconductor crystal on one principal face of a single-crystal growth substrate;
(2) bonding a clad material in accordance with claim 1 to the group III-V semiconductor crystal surface via a metal layer and removing the single-crystal growth substrate from the back surface; and
(3) performing a surface treatment on the group III-V semiconductor crystal surface, forming electrodes, then cutting.
11. The LED light-emitting element of claim 10 , wherein the single-crystal growth substrate is chosen from the group consisting of single-crystal sapphire, single-crystal silicon carbide, single-crystal GaAs and single-crystal Si.
12. The LED light-emitting element of claim 11 , wherein the single-crystal growth substrate is coated with a material chosen from the group consisting of AlN, SiC, GaN and GaAs.
13. The LED light-emitting element of claim 10 , wherein the group III-V semiconductor crystal is one of GaN, GaAs and GaP.