Near-infrared cut filter and device including near-infrared cut filter

1. A near-infrared cut filter, comprising a resin substrate and a near infrared-reflecting film, wherein the resin substrate comprises:

a resin; and

a light absorber comprising a structure derived from a compound represented by Formula (II),

wherein said light absorber is contained in said resin substrate in an amount of 0.001 to 0.01 parts by weight with respect to 100 parts by weight of said resin:

wherein:

each R a independently represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a —NR e R f group or a hydroxy group, wherein R e and R f each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms;

each R b independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a —NR g R h group or a hydroxy group, wherein R g and R h each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a —C(O)R i group, and R i represents an alkyl group having 1 to 5 carbon atoms; and

each R c independently represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 8 carbon atoms, a substituted aliphatic hydrocarbon group having 1 to 8 carbon atoms in which at least one hydrogen atom is substituted with a substituent, an aromatic hydrocarbon group having 6 to 12 carbon atoms or a substituted aromatic hydrocarbon group having 6 to 12 carbon atoms in which at least one hydrogen atom is substituted with an alkyl group,

wherein

the near-infrared cut filter has transmittance satisfying (A) to (D):

(A) in a wavelength range of 430 to 580 nm, the average transmittance measured in a direction perpendicular to a surface of said near-infrared cut filter is 80% or higher;

(B) in a wavelength range of 630 to 650 nm, the average transmittance measured in the direction perpendicular to the surface of said near-infrared cut filter is 70% or higher;

(C) in a wavelength range of 800 to 1,000 nm, the average transmittance measured in the direction perpendicular to the surface of said near-infrared cut filter is 20% or lower; and

(D) in a wavelength range of 550 to 700 nm, an absolute value of a difference between a wavelength at which a transmittance measured in the direction perpendicular to the surface of said near-infrared cut filter is 75% and a wavelength at which a transmittance measured at an angle of 30° with respect to the direction perpendicular to the surface of said near-infrared cut filter is 75% is less than 15 nm, and

wherein the near infrared-reflecting film is a dielectric multilayer film.

2. The near-infrared cut filter according to claim 1 , wherein said resin is a cyclic olefin-based resin or an aromatic polyether-based resin.

3. The near-infrared cut filter according to claim 1 , wherein the near-infrared cut filter is a near-infrared cut filter used for a solid-state image sensing element.

4. A solid-state imaging device, comprising the near-infrared cut filter according to claim 1 .

5. A camera module, comprising the near-infrared cut filter according to claim 1 .

6. The near-infrared cut filter according to claim 1 , wherein the near infrared-reflecting film is provided on the resin substrate.

7. The near-infrared cut filter according to claim 1 , wherein a thickness of the near-infrared cut filter is in a range of 50 to 250 μm.