Composition for forming fine resist pattern and pattern forming method using same
View Patent ↗[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
1. A method for forming a miniaturized negative resist pattern, comprising the steps of
coating a semiconductor substrate with a chemically amplified photoresist composition, to form a photoresist layer;
exposing to light said semiconductor substrate coated with said photoresist layer;
developing said photoresist layer with an organic solvent developer after said exposing step, to form a photoresist pattern;
coating said photoresist pattern with a fine pattern-forming composition comprising: a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):
and
an inorganic acid,
a solvent,
where the fine pattern-forming composition has a pH of 2 to 11;
heating the coated photoresist pattern, and
washing to remove excess of the fine pattern-forming composition.
2. The method according to claim 1 for forming a negative resist pattern, wherein said photoresist composition further comprises a photo acid-generating agent.
3. The method for forming a miniaturized negative resist pattern of claim 1 wherein the fine pattern-forming composition has an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, and nitric acid.
4. The method for forming a miniaturized negative resist pattern of claim 1 wherein the fine pattern-forming composition has an inorganic acid, and the inorganic acid is present at 0.5 to 50 wt %, based on the total weight of the polymer.
5. The method for forming a miniaturized negative resist pattern of claim 1 where the fine pattern-forming composition has a pH between 3 and 10.
6. The method for forming a miniaturized negative resist pattern of claim 1 where the fine pattern-forming composition in which the polymer comprises structure (B).
7. The method for forming a miniaturized negative resist pattern of claim 6 where the polymer is selected from the group consisting of P 1 , P 2 and P 3