Deposition apparatus

1. A deposition apparatus comprising:

a susceptor into which a reactive gas is introduced,

wherein the susceptor includes a susceptor upper plate and a susceptor lower plate facing the susceptor upper plate; and

a wafer holder disposed between the susceptor upper plate and susceptor lower plate to receive a substrate or a wafer, such that a height of the wafer holder is equal to a height between the susceptor upper plate and the susceptor lower plate,

wherein the wafer holder includes a plurality of holes as a gas feeding part, provided at a lateral side of the wafer holder,

wherein the wafer holder further comprises a plurality of wafer support parts making contact with an edge area of the substrate or the wafer,

wherein each wafer support part is a protrusion protruding inward from a periphery of the wafer holder,

wherein the substrate or the wafer is disposed on the wafer support parts within an upper part of the wafer holder,

wherein the reactive gas is introduced to the wafer holder through the gas feeding part,

wherein a distance between the susceptor upper plate and the gas feeding part is greater than a distance between the susceptor upper plate and the plurality of wafer support parts,

wherein a distance between the susceptor upper plate and the wafer support parts corresponds to a thickness of the substrate or the wafer,

wherein an epitaxial layer is formed on the substrate or the wafer inside the wafer holder by the introduced reactive gas.

2. The deposition apparatus of claim 1 , wherein each wafer support part is formed in a shape of a column or a rod in the wafer holder.

3. The deposition apparatus of claim 1 , wherein a shape of the wafer holder comprises a cylindrical shape or a rectangular shape having an open upper portion.

4. The deposition apparatus of claim 1 , wherein the wafer or the substrate includes silicon carbide.

5. The deposition apparatus of claim 1 , wherein the reactive gas includes carbon and silicon.

6. The deposition apparatus of claim 1 , wherein the deposition apparatus forms a silicon carbide epitaxial layer on the wafer or the substrate.

7. The deposition apparatus of claim 1 , wherein the susceptor comprises graphite and is coated with silicon carbide.

8. The deposition apparatus of claim 1 , wherein the epitaxial layer is formed on a lower surface of the substrate or the wafer, and wherein the lower surface of the substrate or the wafer faces the susceptor lower plate.

9. The deposition apparatus of claim 1 , wherein the epitaxial layer is formed on a central area of the substrate or the wafer.